- 专利标题: Atomic layer etching of metal oxide
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申请号: US15717076申请日: 2017-09-27
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公开(公告)号: US10354887B2公开(公告)日: 2019-07-16
- 发明人: Andreas Fischer , Nerissa Draeger
- 申请人: Lam Research Corporation
- 申请人地址: US CA Fremont
- 专利权人: Lam Research Corporation
- 当前专利权人: Lam Research Corporation
- 当前专利权人地址: US CA Fremont
- 代理机构: Beyer Law Group LLP
- 主分类号: H01L21/311
- IPC分类号: H01L21/311 ; H01L21/02 ; H01L21/67 ; H01J37/32
摘要:
A method for etching a metal oxide layer on a semiconductor substrate, comprising providing a plurality of cycles, is provided. Each cycle comprises exposing the metal oxide layer to a reactive hydrogen-containing gas or plasma to transform a part of the metal oxide layer into a layer of metal hydride, stopping the exposing the metal oxide layer to the reactive hydrogen-containing gas or plasma, heating the layer of metal hydride to at least a sublimation temperature to sublime the layer of metal hydride, and cooling the metal oxide layer to a temperature below the sublimation temperature.
公开/授权文献
- US20190096690A1 ATOMIC LAYER ETCHING OF METAL OXIDE 公开/授权日:2019-03-28