Invention Grant
- Patent Title: Atomic layer etching of metal oxide
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Application No.: US15717076Application Date: 2017-09-27
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Publication No.: US10354887B2Publication Date: 2019-07-16
- Inventor: Andreas Fischer , Nerissa Draeger
- Applicant: Lam Research Corporation
- Applicant Address: US CA Fremont
- Assignee: Lam Research Corporation
- Current Assignee: Lam Research Corporation
- Current Assignee Address: US CA Fremont
- Agency: Beyer Law Group LLP
- Main IPC: H01L21/311
- IPC: H01L21/311 ; H01L21/02 ; H01L21/67 ; H01J37/32

Abstract:
A method for etching a metal oxide layer on a semiconductor substrate, comprising providing a plurality of cycles, is provided. Each cycle comprises exposing the metal oxide layer to a reactive hydrogen-containing gas or plasma to transform a part of the metal oxide layer into a layer of metal hydride, stopping the exposing the metal oxide layer to the reactive hydrogen-containing gas or plasma, heating the layer of metal hydride to at least a sublimation temperature to sublime the layer of metal hydride, and cooling the metal oxide layer to a temperature below the sublimation temperature.
Public/Granted literature
- US20190096690A1 ATOMIC LAYER ETCHING OF METAL OXIDE Public/Granted day:2019-03-28
Information query
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