Invention Grant
- Patent Title: Single-curvature cavity for semiconductor epitaxy
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Application No.: US15795833Application Date: 2017-10-27
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Publication No.: US10355104B2Publication Date: 2019-07-16
- Inventor: Yi Qi , Sang Woo Lim , Kyung-Bum Koo , Alina Vinslava , Pei Zhao , Zhenyu Hu , Hsien-Ching Lo , Joseph F. Shepard, Jr. , Shesh Mani Pandey
- Applicant: GLOBALFOUNDRIES Inc.
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES Inc.
- Current Assignee: GLOBALFOUNDRIES Inc.
- Current Assignee Address: KY Grand Cayman
- Agency: Thompson Hine LLP
- Agent Francois Pagette
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L21/84 ; H01L29/66 ; H01L21/3065 ; H01L29/78 ; H01L29/161 ; H01L29/16 ; H01L29/165 ; H01L29/08

Abstract:
Methods of forming a field-effect transistor and structures for a field-effect transistor. A gate structure is formed that overlaps with a channel region beneath a top surface of a semiconductor fin. The semiconductor fin is etched with an anisotropic etching process to form a cavity having a sidewall with a planar section extending vertically toward the top surface of the semiconductor fin and adjacent to the channel region in the semiconductor fin. The semiconductor fin is then etched with an isotropic etching process that widens the cavity at the top surface while preserving verticality of the planar section.
Public/Granted literature
- US20190131432A1 SINGLE-CURVATURE CAVITY FOR SEMICONDUCTOR EPITAXY Public/Granted day:2019-05-02
Information query
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