A light emitting diode including a first conductive type semiconductor layer; a mesa disposed on the first conductive type semiconductor layer and including an active layer and a second conductive type semiconductor layer; an electrode disposed on the mesa and configured to be in ohmic-contact with the corresponding second conductive type semiconductor layer of the mesa, a current spreading layer disposed on the mesa and the electrode and including a first portion, a second portion, and a third portion configured to be in ohmic-contact with a first end portion, a second end portion, and a middle portion of the first conductive type semiconductor layer, respectively, an insulation layer disposed on the mesa and the first conductive type semiconductor layer and having a first region having a thickness that varies along a longitudinal direction of the first semiconductor layer.