Invention Grant
- Patent Title: Partially written block treatment
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Application No.: US15532886Application Date: 2017-01-23
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Publication No.: US10359963B2Publication Date: 2019-07-23
- Inventor: Sivagnanam Parthasarathy , Terry M. Grunzke , Lucia Botticchio , Walter Di Francesco , Vamshi K. Indavarapu , Gianfranco Valeri , Renato C. Padilla , Ali Mohammadzadeh , Jung Sheng Hoei , Luca De Santis
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Brooks, Cameron & Huebsch, PLLC
- International Application: PCT/US2017/014535 WO 20170123
- International Announcement: WO2018/136094 WO 20180726
- Main IPC: G06F3/06
- IPC: G06F3/06 ; G06F12/02 ; G06F12/1009

Abstract:
The present disclosure relates to partially written block treatment. An example method comprises maintaining, internal to a memory device, a status of a last written page corresponding to a partially written block. Responsive to receiving, from a controller, a read request to a page of the partially written block, the example method can include determining, from page map information maintained internal to the memory device and from the status of the last written page, which of a number of different read trim sets to use to read the page of the partially written block corresponding to the read request.
Public/Granted literature
- US10423350B2 Partially written block treatment Public/Granted day:2019-09-24
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