Invention Grant
- Patent Title: Semiconductor structure including low-k spacer material
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Application No.: US15825409Application Date: 2017-11-29
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Publication No.: US10361311B2Publication Date: 2019-07-23
- Inventor: Xiuyu Cai , Kangguo Cheng , Ali Khakifirooz , Ruilong Xie
- Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION , GLOBALFOUNDRIES INC.
- Applicant Address: US NY Armonk KY Grand Cayman
- Assignee: International Business Machines Corporation,GLOBALFOUNDRIES INC.
- Current Assignee: International Business Machines Corporation,GLOBALFOUNDRIES INC.
- Current Assignee Address: US NY Armonk KY Grand Cayman
- Agency: Sherman IP LLP
- Agent Kenneth L. Sherman; Steven Laut
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L29/78 ; H01L29/51 ; H01L21/28 ; H01L21/02 ; H01L21/321 ; H01L29/423 ; H01L29/786
Abstract:
A semiconductor structure includes a substrate, and a replacement metal gate (RMG) structure is attached to the substrate. The RMG structure includes a lower portion and an upper tapered portion. A source junction is disposed on the substrate and attached to a first low-k spacer portion. A drain junction is disposed on the substrate and attached to a second low-k spacer portion. A first oxide layer is disposed on the source junction, and attached to the first low-k spacer portion. A second oxide layer is disposed on the drain junction, and attached to the second low-k spacer portion. A cap layer is disposed on a top surface layer of the RMG structure and attached to the first oxide layer and the second oxide layer.
Public/Granted literature
- US20180090327A1 SEMICONDUCTOR STRUCTURE INCLUDING LOW-K SPACER MATERIAL Public/Granted day:2018-03-29
Information query
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