Disclosed herein are fabrication techniques for providing metal gates in quantum devices, as well as related quantum devices. For example, in some embodiments, a method of manufacturing a quantum device may include providing a gate dielectric over a qubit device layer, providing over the gate dielectric a pattern of non-metallic elements referred to as “gate support elements,” and depositing a gate metal on sidewalls of the gate support elements to form a plurality of gates of the quantum device.