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    Quantum dot devices with independent gate control
    1.
    发明授权
    Quantum dot devices with independent gate control 有权

    公开(公告)号：US11990516B1

    公开(公告)日：2024-05-21

    申请号：US17480722

    申请日：2021-09-21

    申请人： Intel Corporation

    发明人： Hubert C. George ,  Ravi Pillarisetty ,  Brennen Karl Mueller ,  James S. Clarke

    IPC分类号： H01L29/12 ,  G06N10/00 ,  H01L27/088 ,  H01L29/66 ,  H10N69/00

    CPC分类号： H01L29/122 ,  G06N10/00 ,  H01L27/088 ,  H01L29/66977 ,  H10N69/00

    摘要： Quantum dot devices with independent gate control are disclosed. An example quantum dot device includes N parallel rows of gate lines provided over a quantum well stack. Each of the N parallel rows of gate lines defines a respective row of a quantum dot formation region in the quantum well stack and includes M parallel gate lines stacked above one another. The quantum dot device may further include, for each of the N×M gate lines, a gate that extends toward the quantum well stack, where, for an individual row of the N parallel rows, gates that extend toward the quantum well stack from the M parallel stacked gate lines are arranged above a respective row of a quantum dot formation region in the quantum well stack. In this manner, each of the N×M gates responsible for formation of different quantum dots may be controlled independently.

    QUANTUM DOT DEVICES WITH SINGLE ELECTRON TRANSISTOR DETECTORS
    4.
    发明申请
    QUANTUM DOT DEVICES WITH SINGLE ELECTRON TRANSISTOR DETECTORS 有权

    公开(公告)号：US20220140086A1

    公开(公告)日：2022-05-05

    申请号：US17578693

    申请日：2022-01-19

    申请人： Intel Corporation

    发明人： Hubert C. George ,  Ravi Pillarisetty ,  Nicole K. Thomas ,  Jeanette M. Roberts ,  James S. Clarke

    IPC分类号： H01L29/12 ,  H01L29/423 ,  H01L29/76 ,  H01L29/82 ,  H01L29/66 ,  H01L29/775

    摘要： Disclosed herein are quantum dot devices with single electron transistor (SET) detectors. In some embodiments, a quantum dot device may include: a quantum dot formation region; a group of gates disposed on the quantum dot formation region, wherein the group of gates includes at least first, second, and third gates, spacers are disposed on sides of the first and second gates, wherein a first spacer is disposed on a side of the first gate proximate to the second gate, and a second spacer, physically separate from the first spacer, is disposed on a side of the second gate proximate to the first gate, and the third gate is disposed between the first and second gates and extends between the first and second spacers; and a SET disposed on the quantum dot formation region, proximate to the group of gates.

    Quantum dot devices with single electron transistor detectors
    6.
    发明授权
    Quantum dot devices with single electron transistor detectors 有权

    公开(公告)号：US11276756B2

    公开(公告)日：2022-03-15

    申请号：US16329710

    申请日：2016-09-30

    申请人： Intel Corporation

    发明人： Hubert C. George ,  Ravi Pillarisetty ,  Nicole K. Thomas ,  Jeanette M. Roberts ,  James S. Clarke

    IPC分类号： H01L29/12 ,  H01L29/423 ,  H01L29/76 ,  H01L29/82 ,  H01L29/66 ,  H01L29/775 ,  H01L29/778

    摘要： Disclosed herein are quantum dot devices with single electron transistor (SET) detectors. In some embodiments, a quantum dot device may include: a quantum dot formation region; a group of gates disposed on the quantum dot formation region, wherein the group of gates includes at least first, second, and third gates, spacers are disposed on sides of the first and second gates, wherein a first spacer is disposed on a side of the first gate proximate to the second gate, and a second spacer, physically separate from the first spacer, is disposed on a side of the second gate proximate to the first gate, and the third gate is disposed between the first and second gates and extends between the first and second spacers; and a SET disposed on the quantum dot formation region, proximate to the group of gates.