- Patent Title: Programmable write word line boost for low voltage memory operation
-
Application No.: US15424418Application Date: 2017-02-03
-
Publication No.: US10366734B2Publication Date: 2019-07-30
- Inventor: Alexander W. Schaefer , Ravi T. Jotwani , Samiul Haque Khan , David Hugh McIntyre , Stephen Victor Kosonocky , John J. Wuu , Russell Schreiber
- Applicant: Advanced Micro Devices, Inc.
- Applicant Address: US CA Santa Clara
- Assignee: Advanced Micro Devices, Inc.
- Current Assignee: Advanced Micro Devices, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Meyertons Hood Kivlin Kowert and Goetzel PC
- Agent Rory D. Rankin
- Main IPC: G11C8/08
- IPC: G11C8/08 ; G11C11/418 ; G11C5/14 ; G11C11/413 ; G11C11/419

Abstract:
A system and method for efficient power, performance and stability tradeoffs of memory accesses under a variety of conditions are described. A system management unit in a computing system interfaces with a memory and a processing unit, and uses boosting of word line voltage levels in the memory to assist write operations. The computing system supports selecting one of multiple word line boost values, each with an associated cross-over region. A cross-over region is a range of operating voltages for the memory used for determining whether to enable or disable boosting of word line voltage levels in the memory. The system management unit selects between enabling and disabling the boosting of word line voltage levels based on a target operational voltage for the memory and the cross-over region prior to updating the operating parameters of the memory to include the target operational voltage.
Public/Granted literature
- US20180226111A1 PROGRAMMABLE WRITE WORD LINE BOOST FOR LOW VOLTAGE MEMORY OPERATION Public/Granted day:2018-08-09
Information query