- Patent Title: Cylindrical sputtering target and process for producing the same
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Application No.: US14979768Application Date: 2015-12-28
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Publication No.: US10366870B2Publication Date: 2019-07-30
- Inventor: Shigehisa Todoko , Kimiaki Tamano , Kenichi Itoh , Tetsuo Shibutami
- Applicant: TOSOH CORPORATION
- Applicant Address: JP Shunan-shi, Yamaguchi
- Assignee: TOSOH CORPORATION
- Current Assignee: TOSOH CORPORATION
- Current Assignee Address: JP Shunan-shi, Yamaguchi
- Agency: Sughrue Mion, PLLC
- Priority: JP2008-152061 20080610
- Main IPC: C23C14/34
- IPC: C23C14/34 ; H01J37/34 ; C23C14/08

Abstract:
Provided is a cylindrical ceramic sputtering target, which significantly reduces the occurrence of a crack, a chip, extraordinary discharge and a nodule.By filling a molten bonding material in a cavity defined by a cylindrical ceramic target material and a cylindrical base material, starting cooling the molten bonding material from its one end toward its other end in a cylindrical axial direction in sequence, and further filling the molten bonding material in the cavity during cooling, a cylindrical ceramic sputtering target is manufactured so as to be characterized in that as observed by an X-ray radiograph of the bonding material, the total area of portions where no bonding material exists is 10 cm2 or less per 50 cm2 of X-ray radiograph area, and the maximum area of the portions where no bonding material exists is 9 cm2 or less.
Public/Granted literature
- US20160141159A1 CYLINDRICAL SPUTTERING TARGET AND PROCESS FOR PRODUCING THE SAME Public/Granted day:2016-05-19
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