公开(公告)号：US11168393B2

公开(公告)日：2021-11-09

申请号：US16206346

申请日：2018-11-30

Applicant: TOSOH CORPORATION

Inventor： Masami Mesuda ,  Keitaro Matsumaru ,  Koyata Takahashi ,  Ryou Kikuchi ,  Tetsuo Shibutami

IPC: C23C14/34 ,  H01J37/34 ,  C04B35/58 ,  C04B35/626 ,  C04B35/645 ,  C04B37/02 ,  C04B41/88 ,  C04B41/00 ,  C04B41/51 ,  C22C29/16

Abstract: The present invention provides a gallium nitride sintered body and a gallium nitride molded article which have high density and low oxygen content without using a special apparatus. According to the first embodiment, a gallium nitride sintered body, which is characterized by having density of 2.5 g/cm3 to less than 5.0 g/cm3 and an intensity ratio of the gallium oxide peak of the (002) plane to the gallium nitride peak of the (002) plane of less than 3%, which is determined by X-ray diffraction analysis, can be obtained. According to the second embodiment, a metal gallium-impregnated gallium nitride molded article, which is characterized by comprising a gallium nitride phase and a metal gallium phase that exist as separate phases and having a molar ratio, Ga/(Ga+N), of 55% to 80%, can be obtained.

公开(公告)号：US20140332735A1

公开(公告)日：2014-11-13

申请号：US14361455

申请日：2012-11-29

Applicant: TOSOH CORPORATION

Inventor： Hideto Kuramochi ,  Kimiaki Tamano ,  Hitoshi Ilgusa ,  Ryo Akiike ,  Tetsuo Shibutami

IPC: H01B1/08 ,  C23C14/34 ,  C23C14/08 ,  H01J37/34

CPC classification number: H01B1/08 ,  C04B35/01 ,  C04B35/6262 ,  C04B2235/3225 ,  C04B2235/3244 ,  C04B2235/3286 ,  C04B2235/5445 ,  C04B2235/549 ,  C04B2235/6562 ,  C04B2235/6565 ,  C04B2235/6567 ,  C04B2235/6585 ,  C04B2235/6586 ,  C04B2235/77 ,  C04B2235/786 ,  C23C14/083 ,  C23C14/086 ,  C23C14/34 ,  C23C14/3414 ,  H01J37/3429

Abstract: The present invention provides a complex oxide sintered body 10 wherein Zr/(In+Zr+Y) is 0.05 to 4.5 at % and Y/(In+Zr+Y) is 0.005 to 0.5 at % in an atomic ratio when indium, zirconium, and yttrium are designated by In, Zr, and Y, respectively. Moreover, the present invention provides a sputtering target including the complex oxide sintered body 10 and a transparent conductive oxide film obtained by sputtering the sputtering target.

Abstract translation: 本发明提供了一种复合氧化物烧结体10，其中当铟，锆，锆（In + Zr + Y）为0.05〜4.5原子％，Y /（In + Zr + Y）为0.005〜0.5原子％ ，钇分别由In，Zr和Y表示。 此外，本发明提供一种溅射靶，其包括复合氧化物烧结体10和通过溅射溅射靶获得的透明导电氧化物膜。

公开(公告)号：US10366870B2

公开(公告)日：2019-07-30

申请号：US14979768

申请日：2015-12-28

Applicant: TOSOH CORPORATION

Inventor： Shigehisa Todoko ,  Kimiaki Tamano ,  Kenichi Itoh ,  Tetsuo Shibutami

IPC: C23C14/34 ,  H01J37/34 ,  C23C14/08

Abstract: Provided is a cylindrical ceramic sputtering target, which significantly reduces the occurrence of a crack, a chip, extraordinary discharge and a nodule.By filling a molten bonding material in a cavity defined by a cylindrical ceramic target material and a cylindrical base material, starting cooling the molten bonding material from its one end toward its other end in a cylindrical axial direction in sequence, and further filling the molten bonding material in the cavity during cooling, a cylindrical ceramic sputtering target is manufactured so as to be characterized in that as observed by an X-ray radiograph of the bonding material, the total area of portions where no bonding material exists is 10 cm2 or less per 50 cm2 of X-ray radiograph area, and the maximum area of the portions where no bonding material exists is 9 cm2 or less.

公开(公告)号：US09418771B2

公开(公告)日：2016-08-16

申请号：US14361455

申请日：2012-11-29

Applicant: TOSOH CORPORATION

Inventor： Hideto Kuramochi ,  Kimiaki Tamano ,  Hitoshi Iigusa ,  Ryo Akiike ,  Tetsuo Shibutami

IPC: H01B1/08 ,  C04B35/01 ,  C04B35/626 ,  C23C14/08 ,  C23C14/34 ,  H01J37/34

CPC classification number: H01B1/08 ,  C04B35/01 ,  C04B35/6262 ,  C04B2235/3225 ,  C04B2235/3244 ,  C04B2235/3286 ,  C04B2235/5445 ,  C04B2235/549 ,  C04B2235/6562 ,  C04B2235/6565 ,  C04B2235/6567 ,  C04B2235/6585 ,  C04B2235/6586 ,  C04B2235/77 ,  C04B2235/786 ,  C23C14/083 ,  C23C14/086 ,  C23C14/34 ,  C23C14/3414 ,  H01J37/3429

Abstract: The present invention provides a complex oxide sintered body 10 wherein Zr/(In+Zr+Y) is 0.05 to 4.5 at % and Y/(In+Zr+Y) is 0.005 to 0.5 at % in an atomic ratio when indium, zirconium, and yttrium are designated by In, Zr, and Y, respectively. Moreover, the present invention provides a sputtering target including the complex oxide sintered body 10 and a transparent conductive oxide film obtained by sputtering the sputtering target.

Abstract translation: 本发明提供了一种复合氧化物烧结体10，其中当铟，锆，锆（In + Zr + Y）为0.05〜4.5原子％，Y /（In + Zr + Y）为0.005〜0.5原子％ ，钇分别由In，Zr和Y表示。 此外，本发明提供一种溅射靶，其包括复合氧化物烧结体10和通过溅射溅射靶获得的透明导电氧化物膜。