Invention Grant
- Patent Title: Method of manufacturing solar cell
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Application No.: US15832321Application Date: 2017-12-05
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Publication No.: US10367115B2Publication Date: 2019-07-30
- Inventor: Juhwa Cheong , Junyong Ahn , Wonjae Chang , Jaesung Kim
- Applicant: LG ELECTRONICS INC.
- Applicant Address: KR Seoul
- Assignee: LG ELECTRONICS INC.
- Current Assignee: LG ELECTRONICS INC.
- Current Assignee Address: KR Seoul
- Agency: Birch, Stewart, Kolasch & Birch, LLP
- Priority: KR10-2016-0011825 20160129; KR10-2016-0151337 20161114
- Main IPC: H01L31/18
- IPC: H01L31/18 ; H01L31/068 ; H01L31/0368 ; H01L31/0216 ; H01L31/0236 ; H01L31/024 ; H01L31/0745 ; H01L31/105 ; H01L31/20 ; H01L31/0224
Abstract:
A method of manufacturing a solar cell can include forming a silicon oxide film on a semiconductor substrate and successively exposing the silicon oxide film to a temperature in a range of 570° C. to 700° C. to anneal the silicon oxide film.
Public/Granted literature
- US20180097140A1 METHOD OF MANUFACTURING SOLAR CELL Public/Granted day:2018-04-05
Information query
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