公开(公告)号：US12255187B2

公开(公告)日：2025-03-18

申请号：US17623853

申请日：2019-08-01

Applicant: LG ELECTRONICS INC.

Inventor： Jisoo Ko ,  Hyeyoung Yang ,  Wonjae Chang ,  Hyunwoo Cho

IPC: H01L25/075 ,  H01L23/00 ,  H01L33/62

Abstract: The present invention may be applied to display device-related technical fields and relates to a display device using a semiconductor light-emitting element, such as a micro light-emitting diode (LED), and a manufacturing method therefor. The present invention, according to one embodiment, may comprise: a substrate; a stepped film positioned on at least some pixel regions, among a plurality of individual pixel regions positioned on the substrate; an assembly electrode positioned on the substrate or the stepped film; an insulation layer positioned on the assembly electrode; a partition wall positioned on the insulation layer and defining an assembly groove having mounted therein a semiconductor light-emitting element forming the individual pixel; the semiconductor light-emitting element mounted in an assembly surface of the assembly groove; and a lighting electrode electrically connected to the semiconductor light-emitting element.

公开(公告)号：US12080580B2

公开(公告)日：2024-09-03

申请号：US17628776

申请日：2020-02-11

Applicant: LG ELECTRONICS INC.

Inventor： Hyunwoo Cho ,  Bongchu Shim ,  Hyeyoung Yang ,  Jisoo Ko ,  Wonjae Chang

IPC: H01L21/68 ,  H01L21/683 ,  H01L25/075 ,  H01L33/00

CPC classification number: H01L21/68 ,  H01L21/6833 ,  H01L21/6835 ,  H01L25/0753 ,  H01L33/007 ,  H01L33/0075 ,  H01L33/0093 ,  H01L2221/68354 ,  H01L2221/68368

Abstract: The present invention provides an assembly substrate used in a method for manufacturing a display device which mounts semiconductor light emitting devices on a predetermined position of an assembly substrate by using an electric field and a magnetic field. Specifically, the assembly substrate is characterized by comprising: a base part; a plurality of assembly electrodes formed extending in one direction and disposed on the base part; a dielectric layer laminated on the base part so as to cover the assembly electrodes; a partition wall formed on the base part and including a plurality of grooves for guiding the semiconductor light emitting devices to a predetermined position; and a metal shielding layer formed on the base part, wherein each of the plurality of grooves penetrates the partition wall so as to form a seating surface on which the guided light emitting devices are seated, and the metal shielding layer overlaps with a part of the seating surface such that an electric field formed on a part of the seating surface is shielded.

公开(公告)号：US11133426B2

公开(公告)日：2021-09-28

申请号：US16457129

申请日：2019-06-28

Applicant: LG ELECTRONICS INC.

Inventor： Jungmin Ha ,  Sungjin Kim ,  Juhwa Cheong ,  Junyong Ahn ,  Hyungwook Choi ,  Wonjae Chang ,  Jaesung Kim

IPC: H01L31/0224 ,  H01L31/0216 ,  H01L31/0747 ,  H01L31/02 ,  H01L31/0368 ,  H01L31/077 ,  H01L31/18

Abstract: A method for manufacturing a solar cell can include forming a tunneling layer on first and second surfaces of a semiconductor substrate, the tunneling layer including a dielectric material; forming a polycrystalline silicon layer on the tunnel layer at the first surface and on the second surface of the semiconductor substrate; removing portions of the tunnel layer and the polycrystalline silicon layer formed at the first surface of the semiconductor substrate; forming a doping region at the first surface of the semiconductor substrate by diffusing a dopant; forming a passivation layer on the polycrystalline silicon layer at the second surface of the semiconductor substrate; and forming a second electrode connected to the polycrystalline silicon layer by penetrating through the passivation layer.

公开(公告)号：US10230009B2

公开(公告)日：2019-03-12

申请号：US15995701

申请日：2018-06-01

Applicant: LG ELECTRONICS INC.

Inventor： Jungmin Ha ,  Sungjin Kim ,  Juhwa Cheong ,  Junyong Ahn ,  Hyungwook Choi ,  Wonjae Chang ,  Jaesung Kim

IPC: H01L31/0216 ,  H01L31/0224 ,  H01L31/0747 ,  H01L31/02 ,  H01L31/0368 ,  H01L31/077 ,  H01L31/18

Abstract: A solar cell can include a silicon semiconductor substrate having a first conductive type; a oxide layer on a first surface of the silicon semiconductor substrate; a polysilicon layer on the oxide layer and having the first conductive type; an emitter region at a second surface of the silicon semiconductor substrate opposite to the first surface and having a second conductive type opposite to the first conductive type; a first passivation film on the polysilicon layer; a first electrode connected to the polysilicon layer through an opening formed in the first passivation film; a second passivation film on the emitter region; and a second electrode connected to the emitter region through an opening formed in the second passivation film.

公开(公告)号：US10566487B2

公开(公告)日：2020-02-18

申请号：US15196743

申请日：2016-06-29

Applicant: LG ELECTRONICS INC.

Inventor： Wonjae Chang ,  Sungjin Kim ,  Juhwa Cheong ,  Junyong Ahn

IPC: H01L31/0745 ,  H01L31/0224 ,  H01L31/18 ,  H01L31/0288 ,  H01L31/0216 ,  H01L31/0236 ,  H01L31/0368

Abstract: Disclosed is a solar cell including a semiconductor substrate, and a dopant layer disposed over one surface of the semiconductor substrate and having a crystalline structure different from that of the semiconductor substrate, the dopant layer including a dopant. The dopant layer includes a plurality of semiconductor layers stacked one above another in a thickness direction thereof, and an interface layer interposed therebetween. The interface layer is an oxide layer having a higher concentration of oxygen than that in each of the plurality of semiconductor layers.

公开(公告)号：US10367115B2

公开(公告)日：2019-07-30

申请号：US15832321

申请日：2017-12-05

Applicant: LG ELECTRONICS INC.

Inventor： Juhwa Cheong ,  Junyong Ahn ,  Wonjae Chang ,  Jaesung Kim

IPC: H01L31/18 ,  H01L31/068 ,  H01L31/0368 ,  H01L31/0216 ,  H01L31/0236 ,  H01L31/024 ,  H01L31/0745 ,  H01L31/105 ,  H01L31/20 ,  H01L31/0224

Abstract: A method of manufacturing a solar cell can include forming a silicon oxide film on a semiconductor substrate and successively exposing the silicon oxide film to a temperature in a range of 570° C. to 700° C. to anneal the silicon oxide film.

公开(公告)号：US10014419B2

公开(公告)日：2018-07-03

申请号：US15643180

申请日：2017-07-06

Applicant: LG ELECTRONICS INC.

Inventor： Jungmin Ha ,  Sungjin Kim ,  Juhwa Cheong ,  Junyong Ahn ,  Hyungwook Choi ,  Wonjae Chang ,  Jaesung Kim

IPC: H01L31/18 ,  H01L31/0216 ,  H01L31/0224 ,  H01L31/0747 ,  H01L31/02 ,  H01L31/0368 ,  H01L31/077

CPC classification number: H01L31/022433 ,  H01L31/0201 ,  H01L31/02167 ,  H01L31/02168 ,  H01L31/022425 ,  H01L31/03685 ,  H01L31/0747 ,  H01L31/077 ,  H01L31/1824 ,  H01L31/1864 ,  H01L31/1868 ,  Y02E10/50

Abstract: A method for manufacturing a solar cell can include a tunnel layer forming step of forming a tunnel layer on a first surface of a semiconductor substrate, a first conductive type semiconductor region forming step of forming a first conductive type semiconductor region on the first surface of the semiconductor substrate, a second conductive type semiconductor region forming step of forming a second conductive type semiconductor region by doping impurities of a second conductive type into a second surface of the semiconductor substrate, a first passivation film forming step of forming a first passivation film on the first conductive type semiconductor region and an electrode forming step of forming a first electrode connected to the first conductive type semiconductor region and a second electrode connected to the second conductive type semiconductor region.

公开(公告)号：US09722104B2

公开(公告)日：2017-08-01

申请号：US14953264

申请日：2015-11-27

Applicant: LG ELECTRONICS INC.

Inventor： Jungmin Ha ,  Sungjin Kim ,  Juhwa Cheong ,  Junyong Ahn ,  Hyungwook Choi ,  Wonjae Chang ,  Jaesung Kim

IPC: H01L31/0216 ,  H01L31/0224 ,  H01L31/0747 ,  H01L31/02 ,  H01L31/0368 ,  H01L31/077 ,  H01L31/18

CPC classification number: H01L31/022433 ,  H01L31/0201 ,  H01L31/02167 ,  H01L31/02168 ,  H01L31/022425 ,  H01L31/03685 ,  H01L31/0747 ,  H01L31/077 ,  H01L31/1824 ,  H01L31/1864 ,  H01L31/1868 ,  Y02E10/50

Abstract: Disclosed are a solar cell and a method for manufacturing the same. A solar cell includes a semiconductor substrate, a tunnel layer on the first surface of the semiconductor substrate, a first conductive type semiconductor region on the tunnel layer and includes impurities of a first conductive type, a second conductive type semiconductor region on a second surface and includes impurities of a second conductive type opposite the first conductive type, a first passivation film on the first conductive type semiconductor region, a first electrode formed on the first passivation film and connected to the first conductive type semiconductor region through an opening portion formed in the first passivation film, a second passivation film on the second conductive type semiconductor region, and a second electrode formed on the second passivation film and connected to the second conductive type semiconductor region through an opening portion formed in the second passivation film.

公开(公告)号：US12243964B2

公开(公告)日：2025-03-04

申请号：US17633520

申请日：2019-08-21

Applicant: LG ELECTRONICS INC.

Inventor： Wonjae Chang ,  Jisoo Ko ,  Hyeyoung Yang ,  Hyunwoo Cho

IPC: H01L33/38 ,  H01L27/15 ,  H01L33/00 ,  H01L33/62

Abstract: Provided in the present specification are a substrate structure having an exclusive design for allowing assembly on a substrate, at the same time, of a plurality of semiconductor light emitting devices having various colors, and a new type of semiconductor light emitting device, such that the semiconductor light emitting devices can be quickly and accurately assembled on the substrate with a concern about color mixing. Here, at least one of the plurality of semiconductor light emitting devices, according to one embodiment of the present invention, comprises a bump part located in the lateral direction of a surface to be assembled. An assembly groove in which the semiconductor light emitting device including the bump part is assembled is provided with a protrusion part facing toward the inside of the assembly groove.

公开(公告)号：US11462654B2

公开(公告)日：2022-10-04

申请号：US16504995

申请日：2019-07-08

Applicant: LG ELECTRONICS INC.

Inventor： Wonjae Chang ,  Sungjin Kim ,  Juhwa Cheong ,  Junyong Ahn

IPC: H01L31/0745 ,  H01L31/0224 ,  H01L31/18 ,  H01L31/0288 ,  H01L31/0216 ,  H01L31/0236 ,  H01L31/0368

Abstract: Disclosed is a solar cell including a semiconductor substrate, and a dopant layer disposed over one surface of the semiconductor substrate and having a crystalline structure different from that of the semiconductor substrate, the dopant layer including a dopant. The dopant layer includes a plurality of semiconductor layers stacked one above another in a thickness direction thereof, and an interface layer interposed therebetween. The interface layer is an oxide layer having a higher concentration of oxygen than that in each of the plurality of semiconductor layers.