Invention Grant
- Patent Title: Storage device and method of operating the storage device
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Application No.: US15926419Application Date: 2018-03-20
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Publication No.: US10373693B2Publication Date: 2019-08-06
- Inventor: Sang-Soo Cha , Young-Seop Shim , Dae-Won Kim
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agency: Volentine, Whitt & Francos, PLLC
- Priority: KR10-2017-0063517 20170523
- Main IPC: G11C16/06
- IPC: G11C16/06 ; G11C16/34 ; G11C16/26 ; G06F13/40 ; G06F13/16 ; G11C11/56 ; G11C13/00

Abstract:
A method of operating a storage device includes: performing a background read operation on a nonvolatile memory by using a default read voltage level; performing a read retry operation on the nonvolatile memory by using a corrected read voltage level when the background read operation fails; storing the corrected read voltage level in a history buffer when the read retry operation succeeds; and performing a host read operation on the nonvolatile memory by using the history buffer in response to a read request received from a host.
Public/Granted literature
- US20180342305A1 STORAGE DEVICE AND METHOD OF OPERATING THE STORAGE DEVICE Public/Granted day:2018-11-29
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