Invention Grant
- Patent Title: Method of inspecting wafer using electron beam
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Application No.: US15084059Application Date: 2016-03-29
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Publication No.: US10373796B2Publication Date: 2019-08-06
- Inventor: Souk Kim , Chung-sam Jun , Woo-seok Ko , Sang-kil Lee , Kwang-il Shin , Yu-sin Yang , Min-chul Yoon
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR
- Agency: Myers Bigel, P.A.
- Priority: KR10-2015-0044393 20150330
- Main IPC: H01J37/20
- IPC: H01J37/20 ; H01J37/22 ; H01J37/28

Abstract:
A method of inspecting a wafer may include: loading of a wafer onto a stage, the wafer having a plurality of dies thereon; positioning of the wafer such that a plurality of electron beam columns on the wafer respectively face a partial region of each of the plurality of dies on the wafer; scanning the respective partial regions of each of the plurality of dies by using the electron beam columns; and combining a plurality of partial images that are obtained by scanning the partial regions to provide a die image.
Public/Granted literature
- US20160293379A1 Method of Inspecting Wafer Using Electron Beam Public/Granted day:2016-10-06
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