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公开(公告)号：US20160293379A1
公开(公告)日：2016-10-06
申请号：US15084059
申请日：2016-03-29
发明人： Souk Kim , Chung-sam Jun , Woo-seok Ko , Sang-Kil Lee , Kwang-il Shin , Yu-sin Yang , Min-chul Yoon
CPC分类号： H01J37/222 , H01J37/20 , H01J37/28 , H01J2237/20214 , H01J2237/226 , H01J2237/2817
摘要： A method of inspecting a wafer may include: loading of a wafer onto a stage, the wafer having a plurality of dies thereon; positioning of the wafer such that a plurality of electron beam columns on the wafer respectively face a partial region of each of the plurality of dies on the wafer; scanning the respective partial regions of each of the plurality of dies by using the electron beam columns; and combining a plurality of partial images that are obtained by scanning the partial regions to provide a die image.
摘要翻译： 检查晶片的方法可以包括：将晶片装载到台上，所述晶片在其上具有多个管芯; 晶片的定位使得晶片上的多个电子束列分别面对晶片上的多个管芯中的每一个的部分区域; 通过使用电子束柱扫描多个管芯中的每一个的各个部分区域; 以及组合通过扫描所述部分区域获得的多个部分图像以提供管芯图像。
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公开(公告)号：US20210026152A1
公开(公告)日：2021-01-28
申请号：US17036972
申请日：2020-09-29
发明人： Sung-yoon Ryu , Yu-sin Yang , Chung-sam Jun , Hyun-su Kwak , Jung-won Kim
摘要： Provided are a multilayer structure inspection apparatus and method of inspecting a multilayer structure in a sample without damaging the sample, the multilayer structure inspection apparatus being configured to measure both of reflectance and dispersion without damaging the sample, wherein the reflectance and dispersion are variables which are changed sensitively to a change in a repetitive pattern of the multilayer structure, by measuring values thereof, a structural change of the sample between before and after a process is inspected with high accuracy.
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公开(公告)号：US10373796B2
公开(公告)日：2019-08-06
申请号：US15084059
申请日：2016-03-29
发明人： Souk Kim , Chung-sam Jun , Woo-seok Ko , Sang-kil Lee , Kwang-il Shin , Yu-sin Yang , Min-chul Yoon
摘要： A method of inspecting a wafer may include: loading of a wafer onto a stage, the wafer having a plurality of dies thereon; positioning of the wafer such that a plurality of electron beam columns on the wafer respectively face a partial region of each of the plurality of dies on the wafer; scanning the respective partial regions of each of the plurality of dies by using the electron beam columns; and combining a plurality of partial images that are obtained by scanning the partial regions to provide a die image.
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公开(公告)号：US11043433B2
公开(公告)日：2021-06-22
申请号：US16803459
申请日：2020-02-27
发明人： Sung-yoon Ryu , Chung-sam Jun , Yu-sin Yang , Yun-jung Jee , Gil-woo Song
摘要： Provided are a method of inspecting a surface and a method of manufacturing a semiconductor device. The methods include preparing a substrate, selecting a spatial resolution of a first optical device by setting a magnification of an imaging optical system, emitting multi-wavelength light toward a first measurement area of the substrate and obtaining first wavelength-specific images, generating first spectrum data based on the first wavelength-specific images, generating first spectrum data of respective pixels based on the first wavelength-specific images, and extracting a spectrum of at least one first inspection area having a range of the first measurement area or less from the first spectrum data, and analyzing the spectrum. The first optical device includes a light source, an objective lens, a detector, and an imaging optical system. The obtaining first wavelength-specific images includes using the imaging optical system and the detector.
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公开(公告)号：US09261532B1
公开(公告)日：2016-02-16
申请号：US14694115
申请日：2015-04-23
发明人： Hyun-woo Kim , Woo-seok Ko , Young-hwan Kim , Jeong-hoi Kim , Baek-man Sung , Hyung-su Son , Chae-ho Shin , Yu-sin Yang , Jae-youn Wi , Sang-kil Lee , Chung-sam Jun
IPC分类号： G01Q60/40
摘要： A conductive atomic force microscope including a plurality of probe structures each including a probe and a cantilever connected thereto, a power supplier applying a bias voltage, a current detector detecting a first current flowing between a sample object and each of the probes and a second current flowing between a measurement object and each of the probes, and calculating representative currents for the sample and measurement objects based on the first and second currents, respectively, and a controller calculating a ratio between representative currents of the sample object measured by each of the probe structures, calculating a scaling factor for scaling the representative current with respect to the measurement object measured by each of the probes, and determine a reproducible current measurement value based on the second measurement current and the scaling factor may be provided.
摘要翻译： 一种导电原子力显微镜，包括多个探针结构，每个探针结构包括探针和连接到其上的悬臂，施加偏置电压的电源，检测在样品物体和每个探针之间流动的第一电流的电流检测器和第二电流 在测量对象和每个探针之间流动，并且基于第一和第二电流分别计算样本和测量对象的代表性电流，以及控制器，计算由每个探针测量的样本对象的代表性电流之间的比率 计算相对于由每个探针测量的测量对象的代表性电流的缩放因子，并且可以提供基于第二测量电流和缩放因子来确定可重现的电流测量值。
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公开(公告)号：US20190137776A1
公开(公告)日：2019-05-09
申请号：US16135640
申请日：2018-09-19
发明人： Sung-yoon Ryu , Yu-sin Yang , Chung-sam Jun , Hyun-su Kwak , Jung-won Kim
摘要： Provided are a multilayer structure inspection apparatus and method of inspecting a multilayer structure in a sample without damaging the sample, the multilayer structure inspection apparatus being configured to measure both of reflectance and dispersion without damaging the sample, wherein the reflectance and dispersion are variables which are changed sensitively to a change in a repetitive pattern of the multilayer structure, by measuring values thereof, a structural change of the sample between before and after a process is inspected with high accuracy.
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公开(公告)号：US10249544B2
公开(公告)日：2019-04-02
申请号：US15654899
申请日：2017-07-20
发明人： Sung-yoon Ryu , Chung-sam Jun , Yu-sin Yang , Yun-jung Jee , Gil-woo Song
摘要： Provided are a method of inspecting a surface and a method of manufacturing a semiconductor device. The methods include preparing a substrate, selecting a spatial resolution of a first optical device by setting a magnification of an imaging optical system, emitting multi-wavelength light toward a first measurement area of the substrate and obtaining first wavelength-specific images, generating first spectrum data based on the first wavelength-specific images, generating first spectrum data of respective pixels based on the first wavelength-specific images, and extracting a spectrum of at least one first inspection area having a range of the first measurement area or less from the first spectrum data, and analyzing the spectrum. The first optical device includes a light source, an objective lens, a detector, and an imaging optical system. The obtaining first wavelength-specific images includes using the imaging optical system and the detector.
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