Invention Grant
- Patent Title: Method for preventing dishing during the manufacture of semiconductor devices
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Application No.: US15953537Application Date: 2018-04-16
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Publication No.: US10373876B2Publication Date: 2019-08-06
- Inventor: Shih-Yin Hsiao , Kuan-Liang Liu
- Applicant: UNITED MICROELECTRONICS CORP.
- Applicant Address: TW Hsinchu
- Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee Address: TW Hsinchu
- Agency: WPAT, PC
- Main IPC: H01L21/8234
- IPC: H01L21/8234 ; H01L29/40 ; H01L21/311 ; H01L21/3105 ; H01L21/02 ; H01L27/088 ; H01L29/49
Abstract:
A method for manufacturing a semiconductor device and a device manufactured using the same are provided. According to a method approach of the embodiment, a substrate having at least a first area with a plurality of polysilicon gates and a second area adjacent to the first area is provided. A contact etch stop layer (CESL) over the polysilicon gates of the first area is formed, and the CESL extends to the second area. Then, a dielectric layer is formed on the CESL, and a nitride layer is formed on the dielectric layer. The nitride layer is patterned to expose the dielectric layer in the first area and to form a pattern of dummy nitrides on the dielectric layer in the second area.
Public/Granted literature
- US20180233416A1 METHOD FOR PREVENTING DISHING DURING THE MANUFACTURE OF SEMICONDUCTOR DEVICES Public/Granted day:2018-08-16
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