- Patent Title: Spin current magnetoresistance effect element and magnetic memory
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Application No.: US16055589Application Date: 2018-08-06
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Publication No.: US10374151B2Publication Date: 2019-08-06
- Inventor: Eiji Komura , Yohei Shiokawa
- Applicant: TDK CORPORATION
- Applicant Address: JP Tokyo
- Assignee: TDK CORPORATION
- Current Assignee: TDK CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Oliff PLC
- Priority: JP2017-159402 20170822; JP2018-119920 20180625
- Main IPC: H01L29/82
- IPC: H01L29/82 ; H01L43/08 ; H01L43/04 ; G11C11/16 ; G01R33/09 ; H01L43/06

Abstract:
Provided is a spin current magnetoresistance effect element, including: a magnetoresistance effect element including a first ferromagnetic metal layer, a second ferromagnetic metal layer configured for magnetization direction to be changed, and a non-magnetic layer sandwiched between the first ferromagnetic metal layer and the second ferromagnetic metal layer; and a spin-orbit torque wiring extending in a first direction which intersects a lamination direction of the magnetoresistance effect element and joined to the second ferromagnetic metal layer, wherein, a third end portion of the non-magnetic layer is located between a first end portion of the first ferromagnetic metal layer and a second end portion of the second ferromagnetic metal layer as viewed from the lamination direction on one of side surfaces of the magnetoresistance effect element.
Public/Granted literature
- US20190067563A1 SPIN CURRENT MAGNETORESISTANCE EFFECT ELEMENT AND MAGNETIC MEMORY Public/Granted day:2019-02-28
Information query
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