- 专利标题: Magnetic tunnel junction based anti-fuses with cascoded transistors
-
申请号: US15231168申请日: 2016-08-08
-
公开(公告)号: US10374152B2公开(公告)日: 2019-08-06
- 发明人: Anthony J. Annunziata , John K. DeBrosse , Chandrasekharan Kothandaraman
- 申请人: International Business Machines Corporation
- 申请人地址: US NY Armonk
- 专利权人: INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人: INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人地址: US NY Armonk
- 代理机构: Cantor Colburn LLP
- 代理商 Vazken Alexanian
- 主分类号: G11C11/16
- IPC分类号: G11C11/16 ; H01L43/12 ; H01L27/22 ; H01L23/525 ; H01L43/02 ; G11C17/16 ; H01L43/08
摘要:
Magnetic tunnel junction antifuse devices are protected from degradation caused by programming voltage drop across the gates of unselected magnetic tunnel junction antifuses by connecting said magnetic tunnel junctions serially with a first field effect transistor and a second field effect transistor, the first field effect transistor having its gate connected to a positive supply voltage while the gate of the second field effect transistor is switchably connected to a programming voltage, such that when the second field effect transistor of a selected magnetic tunnel junction is switched to direct the programming voltage to program the selected magnetic tunnel junction an unswitched magnetic tunnel junction and the second field effect transistor do not experience a voltage drop across the gates thereof sufficient to degrade.
公开/授权文献
信息查询