- Patent Title: Elevationally-extending strings of memory cells individually comprising a programmable charge storage transistor and methods of processing silicon nitride-comprising materials
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Application No.: US16041388Application Date: 2018-07-20
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Publication No.: US10381377B2Publication Date: 2019-08-13
- Inventor: Fei Wang , Tom J. John , Kunal Shrotri , Anish A. Khandekar , Aaron R. Wilson , John D. Hopkins , Derek F. Lundberg
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Wells St. John, P.S.
- Main IPC: H01L27/11582
- IPC: H01L27/11582 ; H01L21/033 ; H01L29/788 ; H01L21/311 ; H01L27/11556
Abstract:
A method comprises forming material to be etched over a substrate. An etch mask comprising a silicon nitride-comprising region is formed elevationally over the material. The etch mask comprises an elevationally-extending mask opening in the silicon nitride-comprising region that has a minimum horizontal open dimension that is greater in an elevationally-innermost portion of the region than in an elevationally-outermost portion of the region. The elevationally-outermost portion has a greater etch rate in at least one of HF and H3PO4 than does the elevationally-innermost portion. The etch mask is used as a mask while etching an elevationally-extending mask opening into the material. The silicon nitride-comprising region is exposed to at least one of HF and H3PO4 to increase the minimum horizontal open dimension in the elevationally-outermost portion to a greater degree than increase, if any, in the minimum horizontal open dimension in the elevationally-innermost portion. Other aspects and embodiments, including structure independent of method of manufacture, are disclosed.
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