Invention Grant
- Patent Title: Spin transfer torque memory (STTM), methods of forming the same using a non-conformal insulator, and devices including the same
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Application No.: US15753478Application Date: 2015-09-18
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Publication No.: US10381556B2Publication Date: 2019-08-13
- Inventor: Mark L. Doczy , Brian S. Doyle , Charles C. Kuo , Kaan Oguz , Kevin P. O'Brien , Satyarth Suri , Tejaswi K. Indukuri
- Applicant: INTEL CORPORATION
- Applicant Address: US CA Santa Clara
- Assignee: INTEL CORPORATION
- Current Assignee: INTEL CORPORATION
- Current Assignee Address: US CA Santa Clara
- Agency: Grossman, Tucker, Perreault & Pfleger, PLLC
- International Application: PCT/US2015/050842 WO 20150918
- International Announcement: WO2017/048271 WO 20170323
- Main IPC: H01L43/12
- IPC: H01L43/12 ; H01L43/08 ; H01L27/22 ; H01L43/10
Abstract:
Technologies for manufacturing spin transfer torque memory (STTM) elements are disclosed. In some embodiments, the technologies include methods for interrupting the electrical continuity of a re-deposited layer that may form on one or more sidewalls of an STTM element during its formation. Devices and systems including such STTM elements are also described.
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