Invention Grant
- Patent Title: Nonvolatile latch circuit and logic circuit, and semiconductor device using the same
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Application No.: US14669670Application Date: 2015-03-26
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Publication No.: US10382016B2Publication Date: 2019-08-13
- Inventor: Kiyoshi Kato , Jun Koyama
- Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
- Applicant Address: JP Atsugi-shi, Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Atsugi-shi, Kanagawa-ken
- Agency: Fish & Richardson P.C.
- Priority: JP2009-282139 20091211
- Main IPC: H03K3/037
- IPC: H03K3/037 ; H01L29/04 ; H01L27/12 ; H01L29/786 ; G11C11/24 ; G11C14/00 ; H01L27/06 ; H01L27/105 ; H03K19/173

Abstract:
To provide a novel nonvolatile latch circuit and a semiconductor device using the nonvolatile latch circuit, a nonvolatile latch circuit includes a latch portion having a loop structure where an output of a first element is electrically connected to an input of a second element, and an output of the second element is electrically connected to an input of the first element; and a data holding portion configured to hold data of the latch portion. In the data holding portion, a transistor using an oxide semiconductor as a semiconductor material for forming a channel formation region is used as a switching element. In addition, a capacitor electrically connected to a source electrode or a drain electrode of the transistor is included.
Public/Granted literature
- US09893719B2 Nonvolatile latch circuit and logic circuit, and semiconductor device using the same Public/Granted day:2018-02-13
Information query
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