Invention Grant
- Patent Title: Fin type field effect transistors with different pitches and substantially uniform fin reveal
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Application No.: US15982558Application Date: 2018-05-17
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Publication No.: US10388571B2Publication Date: 2019-08-20
- Inventor: Zhenxing Bi , Kangguo Cheng , Thamarai S. Devarajan , Balasubramanian Pranatharthiharan
- Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Applicant Address: US NY Armonk
- Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee Address: US NY Armonk
- Agency: Tutunjian & Bitetto, P.C.
- Agent Jennifer Davis
- Main IPC: H01L21/8234
- IPC: H01L21/8234 ; H01L27/088 ; H01L21/02 ; H01L21/311 ; H01L29/06 ; H01L27/02 ; H01L21/762 ; H01L21/8238 ; H01L27/092
Abstract:
A semiconductor device that includes a first plurality of fin structures in a first device region and a second plurality of fin structures in a second device region. The first plurality of fin structures includes adjacent fin structures separated by a lesser pitch than the adjacent fin structures in the second plurality of fin structures. At least one layer of dielectric material between adjacent fin structures, wherein a portion of the first plurality of fin structures extending above the at least one layer of dielectric material in the first device region is substantially equal to the portion of the second plurality of fin structures extending above the at least one layer of dielectric material in the second device region. Source and drain regions are present on opposing sides of a gate structure that is present on the fin structures.
Public/Granted literature
- US20180269108A1 FIN TYPE FIELD EFFECT TRANSISTORS WITH DIFFERENT PITCHES AND SUBSTANTIALLY UNIFORM FIN REVEAL Public/Granted day:2018-09-20
Information query
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