Invention Grant
- Patent Title: Transient voltage suppression device
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Application No.: US16105318Application Date: 2018-08-20
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Publication No.: US10388647B1Publication Date: 2019-08-20
- Inventor: Kun-Hsien Lin , Zi-Ping Chen , Che-Hao Chuang
- Applicant: AMAZING MICROELECTRONIC CORP.
- Applicant Address: TW New Taipei
- Assignee: Amazing Microelectronic Corp.
- Current Assignee: Amazing Microelectronic Corp.
- Current Assignee Address: TW New Taipei
- Agency: Rosenberg, Klein & Lee
- Main IPC: H01L29/74
- IPC: H01L29/74 ; H01L31/111 ; H01L27/02 ; H01L23/528 ; H01L27/06 ; H01L29/861 ; H01L29/735
Abstract:
An improved transient voltage suppression device includes a semiconductor substrate, a transient voltage suppressor, at least one first diode, at least one conductive pad, and at least one second diode. The transient voltage suppressor has an N-type heavily-doped clamping area. The first anode of the first diode is electrically connected to the N-type heavily-doped clamping area. The conductive pad is electrically connected to the first cathode of the first diode. The second anode of the second diode is electrically connected to the conductive pad and the second cathode of the second diode is electrically connected to the transient voltage suppressor. The first anode is closer to the N-type heavily-doped clamping area rather than the conductive pad. The conductive pad is closer to the N-type heavily-doped clamping area rather than the second anode.
Information query
IPC分类:
