Invention Grant
- Patent Title: Semiconductor device and manufacturing method of the same
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Application No.: US15310244Application Date: 2015-07-07
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Publication No.: US10388773B2Publication Date: 2019-08-20
- Inventor: Masakiyo Sumitomo , Shigeki Takahashi
- Applicant: DENSO CORPORATION
- Applicant Address: JP Kariya
- Assignee: DENSO CORPORATION
- Current Assignee: DENSO CORPORATION
- Current Assignee Address: JP Kariya
- Agency: Posz Law Group, PLC
- Priority: JP2014-144169 20140714; JP2015-120461 20150615
- International Application: PCT/JP2015/003420 WO 20150707
- International Announcement: WO2016/009616 WO 20160121
- Main IPC: H01L29/739
- IPC: H01L29/739 ; H01L29/78 ; H01L27/04 ; H01L27/06 ; H01L29/08 ; H01L29/10 ; H01L29/66 ; H01L29/40 ; H01L29/423 ; H01L29/861 ; H01L29/06
Abstract:
A semiconductor device includes: a drift layer; a base layer on the drift layer; a collector layer and a cathode layer opposite to the base layer; multiple trenches penetrating the base layer; a gate electrode in each trench; an emitter region in a surface portion of the base layer and contacting each trench; a first electrode connected to the base layer and the emitter region; and a second electrode connected to the collector layer and the cathode layer. The gate electrodes in a diode region of a semiconductor substrate are controlled independently from the gate electrodes in the IGBT region. A voltage not forming an inversion layer in the base layer is applied to the gate electrodes in the diode region.
Public/Granted literature
- US20170250269A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME Public/Granted day:2017-08-31
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