Invention Grant
- Patent Title: FinFETs for light emitting diode displays
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Application No.: US15680948Application Date: 2017-08-18
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Publication No.: US10396121B2Publication Date: 2019-08-27
- Inventor: Ajey P. Jacob , Srinivasa Banna , Deepak Nayak
- Applicant: GLOBALFOUNDRIES INC.
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES INC.
- Current Assignee: GLOBALFOUNDRIES INC.
- Current Assignee Address: KY Grand Cayman
- Agency: Roberts Mlotkowski Safran Cole & Calderon, P.C.
- Agent Anthony Canale; Andrew M. Calderon
- Main IPC: H01L27/15
- IPC: H01L27/15 ; H01L33/06 ; H01L33/24 ; H01L33/00 ; H01L33/32 ; H01L33/60 ; H01L33/50 ; H01L29/78

Abstract:
The present disclosure generally relates to semiconductor structures and, more particularly, to finFETs for light emitting diode displays and methods of manufacture. The method includes: forming replacement fin structures with a doped core region, on doped substrate material; forming quantum wells over the replacement fin structures; forming a first color emitting region by doping at least one of the quantum wells over at least a first replacement fin structure of the replacement fin structures, while protecting at least a second replacement fin structure of the replacement fin structures; and forming a second color emitting region by doping another one of the quantum wells over the at least second replacement fin structure of the replacement fin structures, while protecting the first replacement fin structure and other replacement fin structures which are not to be doped.
Public/Granted literature
- US20190058002A1 FINFETS FOR LIGHT EMITTING DIODE DISPLAYS Public/Granted day:2019-02-21
Information query
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