Invention Grant
- Patent Title: Semiconductor device manufacturing method
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Application No.: US15562001Application Date: 2016-03-31
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Publication No.: US10403676B2Publication Date: 2019-09-03
- Inventor: Noburo Hosokawa , Nao Inoue , Katsumi Shibayama
- Applicant: HAMAMATSU PHOTONICS K.K.
- Applicant Address: JP Hamamatsu-shi, Shizuoka
- Assignee: HAMAMATSU PHOTONICS K.K.
- Current Assignee: HAMAMATSU PHOTONICS K.K.
- Current Assignee Address: JP Hamamatsu-shi, Shizuoka
- Agency: Drinker Biddle & Reath LLP
- Priority: JP2015-070697 20150331
- International Application: PCT/JP2016/060832 WO 20160331
- International Announcement: WO2016/159318 WO 20161006
- Main IPC: H01L27/146
- IPC: H01L27/146 ; H01L23/00 ; H01L21/3205 ; H01L23/522 ; H01L23/532 ; H01L21/768 ; H01L31/107 ; H01L31/02 ; H01L31/0216 ; H01L31/103 ; H01L23/48 ; H01L31/0224 ; H01L31/0203

Abstract:
A method includes a first process in which a first wiring is provided on a surface of a semiconductor substrate; a second process in which a light transmitting substrate is attached to the surface; a third process in which the semiconductor substrate is thinned so that the thickness of the semiconductor substrate is smaller than the thickness of the light transmitting substrate; a fourth process in which a through hole is formed in the semiconductor substrate; a fifth process in which a dip coating method is performed using a resin material and thus a resin insulating layer is provided; a sixth process in which a contact hole is formed in the resin insulating layer; and a seventh process in which a second wiring is provided on a surface of the resin insulating layer, and the first wiring and the second wiring are electrically connected via a contact hole.
Public/Granted literature
- US20180175100A1 SEMICONDUCTOR DEVICE MANUFACTURING METHOD Public/Granted day:2018-06-21
Information query
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