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公开(公告)号:US11987493B2
公开(公告)日:2024-05-21
申请号:US17288250
申请日:2019-10-30
Applicant: HAMAMATSU PHOTONICS K.K.
Inventor: Daiki Suzuki , Nao Inoue , Katsumi Shibayama
CPC classification number: B81B3/0072 , B81C1/00666 , G02B26/0833 , B81B2201/042 , B81B2207/07 , B81C2201/0104 , B81C2201/0181
Abstract: The damascene wiring structure includes a base including a main surface provided with a groove, an insulating layer including a first portion provided on an inner surface of the groove and a second portion provided on the main surface, a metal layer provided on the first portion, a wiring portion embedded in the groove, and a cap layer provided to cover the second portion, an end portion of the metal layer, and the wiring portion. A surface of a boundary part between the first portion and the second portion includes an inclined surface inclined with respect to a direction perpendicular to the main surface. The end portion of the metal layer enters between the cap layer and the inclined surface, and in the end portion, a first surface along the cap layer and a second surface along the inclined surface form an acute angle.
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公开(公告)号:US12187607B2
公开(公告)日:2025-01-07
申请号:US17288642
申请日:2019-10-30
Applicant: HAMAMATSU PHOTONICS K.K.
Inventor: Nao Inoue , Jo Ito , Go Tanaka , Atsuya Iima , Daiki Suzuki , Katsumi Shibayama
Abstract: A method of manufacturing a semiconductor substrate according to an embodiment includes a first step of forming a groove having a bottom surface and a side surface on which scallops are formed by performing a process including isotropic etching on a main surface of a substrate, a second step of performing at least one of a hydrophilic treatment on the side surface of the groove and a degassing treatment on the groove, and a third step of removing the scallops formed on the side surface of the groove and planarizing the side surface by performing anisotropic wet etching in a state where the bottom surface of the recess is present.
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公开(公告)号:US11929378B2
公开(公告)日:2024-03-12
申请号:US18120594
申请日:2023-03-13
Applicant: HAMAMATSU PHOTONICS K.K.
Inventor: Nao Inoue , Ryosuke Koike , Haruyuki Nakayama
IPC: H01L27/146 , H01L23/00
CPC classification number: H01L27/14623 , H01L27/14618 , H01L27/14634 , H01L27/14636 , H01L27/1464 , H01L27/14643 , H01L24/13 , H01L24/16 , H01L24/32 , H01L24/73 , H01L2224/13109 , H01L2224/16145 , H01L2224/2919 , H01L2224/32145 , H01L2224/73204 , H01L2224/13109 , H01L2924/00014 , H01L2224/73204 , H01L2224/16145 , H01L2224/32145 , H01L2924/00012
Abstract: A light detection device includes: a back-illuminated light receiving element; a circuit element; a connection member; an underfill; and a light shielding mask. The light shielding mask includes a frame having an opening and a light shielding layer formed on an inner surface of the opening. A first opening edge on the side of the circuit element in the opening is located at the outside of an outer edge of the light receiving element. A second opening edge opposite to the circuit element in the opening is located at the inside of the outer edge of the light receiving element. The opening is narrowed from the first opening edge toward the second opening edge. A width of the frame increases from the first opening edge toward the second opening edge. The underfill reaches a gap between the light receiving element and the light shielding layer.
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公开(公告)号:US11482555B2
公开(公告)日:2022-10-25
申请号:US16963291
申请日:2018-11-27
Applicant: HAMAMATSU PHOTONICS K.K.
Inventor: Shin-ichiro Takagi , Yasuhito Yoneta , Masaharu Muramatsu , Nao Inoue , Hirokazu Yamamoto , Shinichi Nakata , Takuo Koyama
IPC: H01L31/00 , H01L27/146 , H01L21/56 , H01L23/31 , H01L23/00
Abstract: A semiconductor device includes a support body including a mount region, a semiconductor chip disposed on the mount region with a predetermined distance therebetween, a bump disposed between the support body and the semiconductor chip, a wall portion disposed between the support body and the semiconductor chip along a part of an outer edge of the semiconductor chip, and an underfill resin layer disposed between the support body and the semiconductor chip. The underfill resin layer covers an outer side surface of the wall portion.
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公开(公告)号:US10393663B2
公开(公告)日:2019-08-27
申请号:US15553337
申请日:2016-02-10
Applicant: HAMAMATSU PHOTONICS K.K.
Inventor: Katsumi Shibayama , Masashi Ito , Kazuto Ofuji , Hiroki Oyama , Yoshihiro Maruyama , Nao Inoue
Abstract: An SERS element includes a substrate, a fine structure portion formed on a surface of the substrate and having a plurality of pillars, and a conductor layer formed on the fine structure portion and constituting an optical functional portion that causes surface-enhanced Raman scattering. A groove is provided in an outer surface of each pillar. A plurality of gaps are formed in the conductor layer by forming the conductor layer on the outer surface of each pillar in a state in which at least a portion of an inner surface of the groove is exposed.
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公开(公告)号:US11561388B2
公开(公告)日:2023-01-24
申请号:US16492672
申请日:2018-03-14
Applicant: HAMAMATSU PHOTONICS K.K.
Inventor: Tatsuya Sugimoto , Kyosuke Kotani , Tomofumi Suzuki , Katsumi Shibayama , Noburo Hosokawa , Nao Inoue , Masashi Ito , Yutaka Kuramoto
IPC: G02B6/06 , B81B3/00 , G01J3/45 , G02B6/35 , G02B26/08 , B81C3/00 , G02B6/293 , G01J3/02 , G01J3/453 , G01J5/02 , G01N21/35 , G02B26/06
Abstract: A light module includes an optical element and a base on which the optical element is mounted. The optical element has an optical portion which has an optical surface; an elastic portion which is provided around the optical portion such that an annular region is formed; and a pair of support portions which is provided such that the optical portion is sandwiched in a first direction along the optical surface and in which an elastic force is applied and a distance therebetween is able to be changed in accordance with elastic deformation of the elastic portion. The base has a main surface, and a mounting region in which an opening communicating with the main surface is provided. The support portions are inserted into the opening in a state where an elastic force of the elastic portion is applied.
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公开(公告)号:US11101310B2
公开(公告)日:2021-08-24
申请号:US16827866
申请日:2020-03-24
Applicant: HAMAMATSU PHOTONICS K.K.
Inventor: Nao Inoue , Ryosuke Koike , Haruyuki Nakayama
IPC: H01L27/146 , H01L23/00
Abstract: A light detection device includes: a back-illuminated light receiving element; a circuit element; a connection member; an underfill; and a light shielding mask. The light shielding mask includes a frame having an opening and a light shielding layer formed on an inner surface of the opening. A first opening edge on the side of the circuit element in the opening is located at the outside of an outer edge of the light receiving element. A second opening edge opposite to the circuit element in the opening is located at the inside of the outer edge of the light receiving element. The opening is narrowed from the first opening edge toward the second opening edge. A width of the frame increases from the first opening edge toward the second opening edge. The underfill reaches a gap between the light receiving element and the light shielding layer.
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公开(公告)号:US11652120B2
公开(公告)日:2023-05-16
申请号:US17375176
申请日:2021-07-14
Applicant: HAMAMATSU PHOTONICS K.K.
Inventor: Nao Inoue , Ryosuke Koike , Haruyuki Nakayama
IPC: H01L27/146 , H01L23/00
CPC classification number: H01L27/14623 , H01L27/1464 , H01L27/14618 , H01L27/14634 , H01L27/14636 , H01L27/14643 , H01L24/13 , H01L24/16 , H01L24/32 , H01L24/73 , H01L2224/13109 , H01L2224/16145 , H01L2224/2919 , H01L2224/32145 , H01L2224/73204 , H01L2224/13109 , H01L2924/00014 , H01L2224/73204 , H01L2224/16145 , H01L2224/32145 , H01L2924/00012
Abstract: A light detection device includes: a back-illuminated light receiving element; a circuit element; a connection member; an underfill; and a light shielding mask. The light shielding mask includes a frame having an opening and a light shielding layer formed on an inner surface of the opening. A first opening edge on the side of the circuit element in the opening is located at the outside of an outer edge of the light receiving element. A second opening edge opposite to the circuit element in the opening is located at the inside of the outer edge of the light receiving element. The opening is narrowed from the first opening edge toward the second opening edge. A width of the frame increases from the first opening edge toward the second opening edge. The underfill reaches a gap between the light receiving element and the light shielding layer.
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公开(公告)号:US10672814B2
公开(公告)日:2020-06-02
申请号:US16152494
申请日:2018-10-05
Applicant: HAMAMATSU PHOTONICS K.K.
Inventor: Nao Inoue , Ryosuke Koike , Haruyuki Nakayama
IPC: H01L31/0203 , H01L27/146 , H01L23/00
Abstract: A light detection device includes: a back-illuminated light receiving element; a circuit element; a connection member; an underfill; and a light shielding mask. The light shielding mask includes a frame having an opening and a light shielding layer formed on an inner surface of the opening. A first opening edge on the side of the circuit element in the opening is located at the outside of an outer edge of the light receiving element. A second opening edge opposite to the circuit element in the opening is located at the inside of the outer edge of the light receiving element. The opening is narrowed from the first opening edge toward the second opening edge. A width of the frame increases from the first opening edge toward the second opening edge. The underfill reaches a gap between the light receiving element and the light shielding layer.
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公开(公告)号:US10403676B2
公开(公告)日:2019-09-03
申请号:US15562001
申请日:2016-03-31
Applicant: HAMAMATSU PHOTONICS K.K.
Inventor: Noburo Hosokawa , Nao Inoue , Katsumi Shibayama
IPC: H01L27/146 , H01L23/00 , H01L21/3205 , H01L23/522 , H01L23/532 , H01L21/768 , H01L31/107 , H01L31/02 , H01L31/0216 , H01L31/103 , H01L23/48 , H01L31/0224 , H01L31/0203
Abstract: A method includes a first process in which a first wiring is provided on a surface of a semiconductor substrate; a second process in which a light transmitting substrate is attached to the surface; a third process in which the semiconductor substrate is thinned so that the thickness of the semiconductor substrate is smaller than the thickness of the light transmitting substrate; a fourth process in which a through hole is formed in the semiconductor substrate; a fifth process in which a dip coating method is performed using a resin material and thus a resin insulating layer is provided; a sixth process in which a contact hole is formed in the resin insulating layer; and a seventh process in which a second wiring is provided on a surface of the resin insulating layer, and the first wiring and the second wiring are electrically connected via a contact hole.
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