Invention Grant
- Patent Title: Semiconductor device and method of manufacturing the same
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Application No.: US15843765Application Date: 2017-12-15
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Publication No.: US10403751B2Publication Date: 2019-09-03
- Inventor: Jong Su Kim
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si, Gyeonggi-Do
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si, Gyeonggi-Do
- Agency: F. Chau & Associates, LLC
- Main IPC: H01L29/08
- IPC: H01L29/08 ; H01L29/45 ; H01L29/78 ; H01L29/10 ; H01L23/535 ; H01L29/66 ; H01L21/768 ; H01L27/092 ; H01L21/311 ; H01L21/027 ; H01L21/3105 ; H01L21/8238
Abstract:
A semiconductor device includes a substrate, and a first source/drain region formed on the substrate. The semiconductor device further includes a channel formed on the first source/drain region, and a second source/drain region formed on the channel. The semiconductor device also includes a gate electrode formed on an external surface of the channel, and a metal pad formed on the substrate. The height of an upper surface of the metal pad is the same as the length of an upper surface of the gate electrode.
Public/Granted literature
- US20180204946A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2018-07-19
Information query
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