Implementations of the present disclosure relate to improved hardmask materials and methods for patterning and etching of substrates. A plurality of hardmasks may be utilized in combination with patterning and etching processes to enable advanced device architectures. In one implementation, a first hardmask and a second hardmask disposed on a substrate having various material layers disposed thereon. The second hardmask may be utilized to pattern the first hardmask during a first etching process. A third hardmask may be deposited over the first and second hardmasks and a second etching process may be utilized to form channels in the material layers.