- 专利标题： Transistor with air spacer and self-aligned contact
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申请号： US15485886申请日： 2017-04-12
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公开(公告)号： US10411106B2公开(公告)日： 2019-09-10
- 发明人: Kangguo Cheng , Xin Miao , Peng Xu , Chen Zhang
- 申请人： International Business Machines Corporation
- 申请人地址： US NY Armonk
- 专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人地址： US NY Armonk
- 代理机构： Cantor Colburn LLP
- 代理商 Vazken Alexanian
- 主分类号： H01L21/311
- IPC分类号： H01L21/311 ; H01L21/02 ; H01L21/768 ; H01L29/66 ; H01L29/40 ; H01L29/49 ; H01L23/535 ; H01L29/06 ; H01L21/306 ; H01L21/28 ; H01L29/417
摘要：
A method of fabricating a semiconductor transistor and the semiconductor transistor include a source region and a drain region within a substrate. The method includes forming a gate above the substrate, forming a source contact above the source region and a drain contact above the drain region, and forming air spacers within a dielectric between the gate and each of the source contact and the drain contact. Metal caps are formed on the source contact and the drain contact, and a gate cap is formed between the dielectric and at least a portion of a bottom surface of higher-level contacts, which are contacts formed above the source contact and the drain contact.
公开/授权文献
- US20180090593A1 TRANSISTOR WITH AIR SPACER AND SELF-ALIGNED CONTACT 公开/授权日：2018-03-29
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