Invention Grant
- Patent Title: Storage device, memory system, and read voltage decision method thereof
-
Application No.: US15615849Application Date: 2017-06-07
-
Publication No.: US10424388B2Publication Date: 2019-09-24
- Inventor: Hyunkyo Oh , Seungkyung Ro , Heewon Lee , Seongnam Kwon , Oak-Ha Kim , Donggi Lee
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: Samsung ELectronics Co., Ltd.
- Current Assignee: Samsung ELectronics Co., Ltd.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agency: Volentine, Whitt & Francos, PLLC
- Priority: KR10-2016-0135274 20161018
- Main IPC: G11C29/00
- IPC: G11C29/00 ; G11C16/34 ; G06N20/00 ; G11C29/04 ; G11C29/52 ; G11C7/14 ; G11C11/56 ; G11C16/26 ; G11C29/02 ; G11C29/42 ; G11C16/04

Abstract:
A memory system includes multiple storage devices that each include a nonvolatile memory device. A client device is configured to collect deterioration information of the nonvolatile memory devices provided from the storage devices. A server device is configured to receive the collected deterioration information and to predict a degree of deterioration of the nonvolatile memory devices in real time by performing machine learning based on the collected deterioration information and initial deterioration information. The client device determines a read level of the nonvolatile memory device based on the degree of deterioration of the nonvolatile memory devices from the server device. The storage device sets the nonvolatile memory device to operate based on the read level determined in the client device.
Public/Granted literature
- US20180108422A1 STORAGE DEVICE, MEMORY SYSTEM, AND READ VOLTAGE DECISION METHOD THEREOF Public/Granted day:2018-04-19
Information query