Embodiments are directed to methods and resulting structures for a vertical field effect transistor (VFET) having a super long channel. A pair of semiconductor fins is formed on a substrate. A semiconductor pillar is formed between the semiconductor fins on the substrate. A region that extends under all of the semiconductor fins and under part of the semiconductor pillar is doped. A conductive gate is formed over a channel region of the semiconductor fins and the semiconductor pillar. A surface of the semiconductor pillar serves as an extended channel region when the gate is active.