Invention Grant
- Patent Title: Power amplifier with RF structure
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Application No.: US15584000Application Date: 2017-05-01
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Publication No.: US10431511B2Publication Date: 2019-10-01
- Inventor: Daeik Daniel Kim , Shu Zhang , Bonhoon Koo , Manuel Aldrete , Jie Fu , Chin-Kwan Kim , Babak Nejati , Husnu Ahmet Masaracioglu
- Applicant: QUALCOMM Incorporated
- Applicant Address: US CA San Diego
- Assignee: QUALCOMM Incorporated
- Current Assignee: QUALCOMM Incorporated
- Current Assignee Address: US CA San Diego
- Agency: Muncy, Geissler, Olds & Lowe, P.C./Qualcomm
- Main IPC: H01L23/12
- IPC: H01L23/12 ; H01L23/66 ; H01L23/498 ; H01L23/552

Abstract:
In exemplary aspects of the disclosure, magnetic coupling problems in a power amplifier/antenna circuit may be address by using a self-shielded RF inductor mounted over the PA output match inductor embedded in the substrate to offer full RF isolation of both PA output match inductors (self-shielded and embedded) or using a self-shielded RF inductor mounted over the PA output match inductor embedded in the substrate along with a component level conformal shield around the self-shielded inductor on the assembly structure.
Public/Granted literature
- US20180316319A1 POWER AMPLIFIER WITH RF STRUCTURE Public/Granted day:2018-11-01
Information query
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