Invention Grant
- Patent Title: Polysilicon thin film and manufacturing method thereof, TFT and manufacturing method thereof, and display panel
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Application No.: US15116980Application Date: 2015-10-16
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Publication No.: US10431669B2Publication Date: 2019-10-01
- Inventor: Xiaolong Li , Zheng Liu , Xiaoyong Lu , Dong Li , Chunping Long
- Applicant: BOE TECHNOLOGY GROUP CO., LTD.
- Applicant Address: CN Beijing
- Assignee: BOE TECHNOLOGY GROUP CO., LTD.
- Current Assignee: BOE TECHNOLOGY GROUP CO., LTD.
- Current Assignee Address: CN Beijing
- Agency: Armstrong Teasdale LLP
- Priority: CN201510350269 20150623
- International Application: PCT/CN2015/092080 WO 20151016
- International Announcement: WO2016/206244 WO 20161229
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L21/20 ; H01L21/265 ; H01L21/28 ; H01L27/12 ; H01L29/06 ; H01L29/786
Abstract:
A manufacturing method for a polysilicon thin film is provided. The manufacturing method for a polysilicon thin film includes forming a polysilicon layer, treating a surface of the polysilicon layer so that the surface of the polysilicon layer is electronegative, and supplying polar gas into a process chamber so that polar molecules of the polar gas are adsorbed on the surface of the polysilicon layer which is electronegative so as to form the polysilicon thin film, a surface of which has a hole density higher than an electron density.
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