In accordance with an embodiment of the invention, an IC device is disclosed. In the embodiment, the IC device includes an array of bit cells of static random-access memory (SRAM), a multi-level digitization module configured to generate a value in a range of values from a bit cell in the array of bit cells, the range of values including more than two discrete values, an output buffer configured to store the generated values, and an error correction code (ECC) decoder configured to output error corrected values based on the stored values.