Invention Grant
- Patent Title: Metallization layers for semiconductor devices and methods of forming thereof
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Application No.: US15261566Application Date: 2016-09-09
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Publication No.: US10439062B2Publication Date: 2019-10-08
- Inventor: Bernhard Goller , Kurt Matoy
- Applicant: Infineon Technologies AG
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Slater Matsil, LLP
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L21/306 ; H01L21/308 ; H01L21/768 ; H01L29/417 ; H01L29/423 ; H01L29/66 ; H01L29/34 ; H01L29/40 ; H01L29/861 ; H01L21/74
Abstract:
A method of fabricating a semiconductor device includes etching a first surface of a semiconductor substrate from a first side using a first etching process to expose a second surface. The second surface includes a first plurality of features. The first plurality of features has an average height that is a first height. The second surface of the semiconductor substrate is etched from the first side using a second etching process to expose a third surface of the semiconductor substrate. The second etching process converts the first plurality of features into a second plurality of features. The second plurality of features has an average height that is a second height. The second height is less than the first height. A conductive layer is formed over the third surface of the semiconductor substrate using a physical deposition process.
Public/Granted literature
- US20180076321A1 Metallization Layers for Semiconductor Devices and Methods of Forming Thereof Public/Granted day:2018-03-15
Information query
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