Invention Grant
- Patent Title: Method and system for providing a magnetic junction having a low damping hybrid free layer
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Application No.: US15603402Application Date: 2017-05-23
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Publication No.: US10439133B2Publication Date: 2019-10-08
- Inventor: Dmytro Apalkov , Xueti Tang , Vladimir Nikitin , Shuxia Wang , Gen Feng
- Applicant: Samsung Electronics Co., LTD.
- Applicant Address: KR Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Van Pelt, Yi & James LLP
- Main IPC: H01L43/00
- IPC: H01L43/00 ; H01L43/08 ; H01L43/12 ; G11C11/16 ; H01L43/10

Abstract:
A magnetic junction and method for providing the magnetic junction are described. The magnetic junction includes a reference layer, a nonmagnetic spacer layer and a hybrid free layer. The hybrid free layer is switchable between stable magnetic states using a current passed through the magnetic junction. The nonmagnetic spacer layer is between the free layer and the reference layer. The hybrid free layer includes a soft magnetic layer, a hard magnetic layer and an oxide coupling layer between the hard magnetic layer and the soft magnetic layer. The soft magnetic layer has a soft layer magnetic thermal stability coefficient of not more than thirty. The hard magnetic layer has a hard layer magnetic thermal stability coefficient of at least twice the soft layer magnetic thermal stability coefficient.
Public/Granted literature
- US20180261762A1 METHOD AND SYSTEM FOR PROVIDING A MAGNETIC JUNCTION HAVING A LOW DAMPING HYBRID FREE LAYER Public/Granted day:2018-09-13
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