- Patent Title: Memory system for dualizing first memory based on operation mode
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Application No.: US15290824Application Date: 2016-10-11
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Publication No.: US10445003B2Publication Date: 2019-10-15
- Inventor: Min-Chang Kim , Chang-Hyun Kim , Do-Yun Lee , Yong-Woo Lee , Jae-Jin Lee , Hoe-Kwon Jung
- Applicant: SK hynix Inc.
- Applicant Address: KR Gyeonggi-do
- Assignee: SK hynix Inc.
- Current Assignee: SK hynix Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: IP & T Group LLP
- Main IPC: G06F3/06
- IPC: G06F3/06 ; G06F13/42

Abstract:
A memory system includes: a first memory device including a first memory and a first memory controller suitable for controlling the first memory to store data; a second memory device including a second memory and a second memory controller suitable for controlling the second memory to store data; and a processor suitable for executing an operating system (OS) and an application to access a data storage memory through the first and second memory devices.
Public/Granted literature
- US20170109060A1 MEMORY SYSTEM Public/Granted day:2017-04-20
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