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公开(公告)号:US11138120B2
公开(公告)日:2021-10-05
申请号:US16799566
申请日:2020-02-24
Applicant: SK hynix Inc.
Inventor: Yong-Woo Lee , Min-Chang Kim , Chang-Hyun Kim , Do-Yun Lee , Jae-Jin Lee , Hun-Sam Jung , Chan-Jong Woo
IPC: G06F12/08 , G06F12/0868 , G06F12/0893 , G06F13/00 , G06F12/0875
Abstract: A memory system includes: a first memory module including first volatile memories; a second memory module including second volatile memories, non-volatile memories and a module controller; a memory controller controlling the first and second memory modules through second and third control buses, respectively; and a switch array electrically coupling the second and third control buses, wherein the module controller controls the switch array to electrically couple the second and third control buses in a backup operation for backing up data of the first volatile memories to the non-volatile memories, wherein the first and second memory modules include one or more first memory stacks and one or more second memory stacks, respectively, wherein the first volatile memories are stacked in the first memory stacks, and wherein the second volatile memories, the non-volatile memories and the module controller are stacked in the second memory stacks.
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公开(公告)号:US10445003B2
公开(公告)日:2019-10-15
申请号:US15290824
申请日:2016-10-11
Applicant: SK hynix Inc.
Inventor: Min-Chang Kim , Chang-Hyun Kim , Do-Yun Lee , Yong-Woo Lee , Jae-Jin Lee , Hoe-Kwon Jung
Abstract: A memory system includes: a first memory device including a first memory and a first memory controller suitable for controlling the first memory to store data; a second memory device including a second memory and a second memory controller suitable for controlling the second memory to store data; and a processor suitable for executing an operating system (OS) and an application to access a data storage memory through the first and second memory devices.
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公开(公告)号:US09990143B2
公开(公告)日:2018-06-05
申请号:US15291902
申请日:2016-10-12
Applicant: SK hynix Inc.
Inventor: Do-Yun Lee , Min-Chang Kim , Chang-Hyun Kim , Yong-Woo Lee , Jae-Jin Lee , Hoe-Kwon Jung
IPC: G06F12/0802 , G06F3/06
CPC classification number: G06F3/0611 , G06F3/0622 , G06F3/0626 , G06F3/0659 , G06F3/0685 , G06F3/0688 , G06F12/0246 , G06F12/0802 , G06F2212/60 , G06F2212/7202 , G06F2212/7203
Abstract: A memory system includes: a first memory device including a first memory and a first memory controller suitable for controlling the first memory to store data; a second memory device including a second memory and a second memory controller suitable for controlling the second memory to store data; and a processor suitable for executing an operating system (OS) and an application, and accessing data storage memory through the first and second memory devices.
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公开(公告)号:US10651829B2
公开(公告)日:2020-05-12
申请号:US16234970
申请日:2018-12-28
Applicant: SK hynix Inc.
Inventor: Min-Chang Kim
IPC: H03K3/00 , H03K3/356 , H03K5/1534 , H04L25/02 , H03K3/012 , H03K5/02 , H03K19/0185 , H03K17/687 , H03K5/00
Abstract: A signal receiver circuit includes: a negative voltage applier suitable for applying a negative voltage to a common source node in response to a first clock is at a first logic level; a first sampling transistor coupled between the common source node and a first sampling node to sink a current from the first sampling node to the common source node in response to a first input signal; a second sampling transistor coupled between the common source node and a second sampling node to sink a current from the second sampling node to the common source node in response to a second input signal; an equalizer suitable for equalizing the first sampling node and the second sampling node in response to the first clock is at a second logic level; a precharger suitable for precharging a first output node and a second output node with a pull-up voltage in response to a second clock is at the first logic level, and electrically coupling the first output node and second output node to the second sampling node and the first sampling node, respectively, in response to the second clock is at the second logic level; and an amplifier suitable for amplifying a voltage difference between the first output node and the second output node in response to the second clock is at the second logic level.
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公开(公告)号:US10466909B2
公开(公告)日:2019-11-05
申请号:US15294320
申请日:2016-10-14
Applicant: SK hynix Inc.
Inventor: Chang-Hyun Kim , Min-Chang Kim , Do-Yun Lee , Yong-Woo Lee , Jae-Jin Lee , Hun-Sam Jung
Abstract: A memory system includes: a first memory device including a first memory and a first memory controller suitable for controlling the first memory to store data; a second memory device including a second memory and a second memory controller suitable for controlling the second memory to store data; and a processor suitable for executing an operating system (OS) and an application to access data storage memory through the first and second memory devices.
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公开(公告)号:US09990283B2
公开(公告)日:2018-06-05
申请号:US15291834
申请日:2016-10-12
Applicant: SK hynix Inc.
Inventor: Do-Yun Lee , Min-Chang Kim , Chang-Hyun Kim , Yong-Woo Lee , Jae-Jin Lee , Hoe-Kwon Jung
CPC classification number: G06F12/0638 , G06F9/00 , G06F13/00 , G06F2212/205
Abstract: A memory system includes: a first memory device including a plurality of first memories and a first memory controller suitable for controlling the plurality of first memories to store data; a second memory device including a second memory and a second memory controller suitable for controlling the second memory to store data; and a processor suitable for executing an operating system (OS) and an application to access a data storage memory through the first and second memory devices.
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公开(公告)号:US09595309B2
公开(公告)日:2017-03-14
申请号:US14997775
申请日:2016-01-18
Applicant: SK hynix Inc.
Inventor: Chang-Hyun Kim , Min-Chang Kim , Do-Yun Lee , Jae-Jin Lee , Hun-Sam Jung
IPC: G11C8/00 , G11C8/08 , G11C8/12 , G11C8/10 , G11C11/4076
CPC classification number: G11C8/08 , G11C7/04 , G11C8/00 , G11C8/10 , G11C8/12 , G11C11/4076 , G11C29/021 , G11C29/028
Abstract: A semiconductor memory device includes a plurality of memory cells coupled to multiple word lines a word line deactivation voltage generation block suitable for generating word line deactivation voltages having different voltage levels corresponding to temperature ranges, and a word line driving block suitable for driving a word line to be deactivated with the word line deactivation voltages selected from the word line deactivation voltages.
Abstract translation: 半导体存储器件包括耦合到多个字线的多个存储器单元,适用于生成具有与温度范围相对应的不同电压电平的字线去激活电压的字线去激活电压产生块,以及适于驱动字线的字线驱动块 用从字线去激活电压中选择的字线去激活电压来停用。
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公开(公告)号:US11709777B2
公开(公告)日:2023-07-25
申请号:US17493313
申请日:2021-10-04
Applicant: SK hynix Inc.
Inventor: Yong-Woo Lee , Min-Chang Kim , Chang-Hyun Kim , Do-Yun Lee , Jae-Jin Lee , Hun-Sam Jung , Chan-Jong Woo
IPC: G06F12/08 , G06F12/0868 , G06F12/0893 , G06F13/00 , G06F12/0875
CPC classification number: G06F12/0868 , G06F12/0875 , G06F12/0893 , G06F13/00 , G06F2212/1021 , G06F2212/1044 , G06F2212/214 , G06F2212/451 , Y02D10/00
Abstract: A memory system includes: a first memory module including first volatile memories; a second memory module including second volatile memories, non-volatile memories and a module controller; a memory controller controlling the first and second memory modules through second and third control buses, respectively; and a switch array electrically coupling the second and third control buses, wherein the module controller controls the switch array to electrically couple the second and third control buses in a backup operation for backing up data of the first volatile memories to the non-volatile memories, wherein the first and second memory modules include one or more first memory stacks and one or more second memory stacks, respectively, wherein the first volatile memories are stacked in the first memory stacks, and wherein the second volatile memories, the non-volatile memories and the module controller are stacked in the second memory stacks.
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公开(公告)号:US10305705B2
公开(公告)日:2019-05-28
申请号:US15845318
申请日:2017-12-18
Applicant: SK hynix Inc. , Seoul National University R&DB Foundation
Inventor: Suhwan Kim , Min-Chang Kim , Deog-Kyoon Jeong
Abstract: A signal receiver circuit may include: a receiver suitable for generating a received signal based on comparison of an input signal with a reference voltage during a normal operation and based on comparison of the input signal with a target voltage during a training operation; a compensator suitable for applying a weight to the received signal to compensate for the input signal; and a weight adjuster suitable for adjusting the weight based on a level of the received signal during the training operation, wherein during the training operation, the input signal toggles between first and second levels, and the receiver is enabled when the input signal is at the first level.
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公开(公告)号:US10169242B2
公开(公告)日:2019-01-01
申请号:US15294387
申请日:2016-10-14
Applicant: SK hynix Inc.
Inventor: Yong-Woo Lee , Min-Chang Kim , Chang-Hyun Kim , Do-Yun Lee , Jae-Jin Lee , Hun-Sam Jung
IPC: G06F12/08 , G06F12/0875 , G06F13/00
Abstract: A memory system includes: a memory module including: a first memory device including a first memory and a first memory controller suitable for controlling the first memory to store data; and a second memory device including a second memory and a second memory controller suitable for controlling the second memory to store data; and a processor suitable for executing an operating system (OS) and an application to access a data storage memory through the first and second memory devices.
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