Invention Grant
- Patent Title: Method for writing in an EEPROM memory and corresponding device
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Application No.: US15984779Application Date: 2018-05-21
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Publication No.: US10446235B2Publication Date: 2019-10-15
- Inventor: François Tailliet
- Applicant: STMicroelectronics (Rousset) SAS
- Applicant Address: FR Rousset
- Assignee: STMICROELECTRONICS (ROUSSET) SAS
- Current Assignee: STMICROELECTRONICS (ROUSSET) SAS
- Current Assignee Address: FR Rousset
- Agency: Slater Matsil, LLP
- Priority: FR1651431 20160222
- Main IPC: G11C16/04
- IPC: G11C16/04 ; G11C16/10 ; G11C16/14 ; H01L27/11521 ; H01L27/11526 ; H01L29/788

Abstract:
A method can be used for writing in a memory location of the electrically-erasable and programmable memory type. The memory location includes a first memory cell with a first transistor having a first gate dielectric underlying a first floating gate and a second memory cell with a second transistor having a second gate dielectric underlying a second floating gate that is connected to the first floating gate. In a first writing phase, an identical tunnel effect is implemented through the first gate dielectric and the second gate dielectric. In a second writing phase, a voltage across the first gate dielectric but not the second gate dielectric is increased.
Public/Granted literature
- US20180268901A1 METHOD FOR WRITING IN AN EEPROM MEMORY AND CORRESPONDING DEVICE Public/Granted day:2018-09-20
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