Invention Grant
- Patent Title: Semiconductor devices comprising nickel— and copper—containing interconnects
-
Application No.: US16106611Application Date: 2018-08-21
-
Publication No.: US10446440B2Publication Date: 2019-10-15
- Inventor: Salman Akram , James M. Wark , William Mark Hiatt
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: TraskBritt
- Main IPC: H01L21/768
- IPC: H01L21/768 ; C23C18/18 ; C23C18/16 ; H01L21/288 ; C23C18/34 ; C23C18/36
Abstract:
A method of activating a metal structure on an intermediate semiconductor device structure toward metal plating. The method comprises providing an intermediate semiconductor device structure comprising at least one first metal structure and at least one second metal structure on a semiconductor substrate. The at least one first metal structure comprises at least one aluminum structure, at least one copper structure, or at least one structure comprising a mixture of aluminum and copper and the at least one second metal structure comprises at least one tungsten structure. One of the at least one first metal structure and the at least one second metal structure is activated toward metal plating without activating the other of the at least one first metal structure and the at least one second metal structure. An intermediate semiconductor device structure is also disclosed.
Public/Granted literature
- US20180358263A1 SEMICONDUCTOR DEVICES COMPRISING NICKEL-AND COPPER-CONTAINING INTERCONNECTS Public/Granted day:2018-12-13
Information query
IPC分类:
