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    Semiconductor devices comprising nickel— and copper—containing interconnects
    1.
    发明授权
    Semiconductor devices comprising nickel— and copper—containing interconnects 有权

    公开(公告)号：US10446440B2

    公开(公告)日：2019-10-15

    申请号：US16106611

    申请日：2018-08-21

    申请人： Micron Technology, Inc.

    发明人： Salman Akram ,  James M. Wark ,  William Mark Hiatt

    IPC分类号： H01L21/768 ,  C23C18/18 ,  C23C18/16 ,  H01L21/288 ,  C23C18/34 ,  C23C18/36

    摘要： A method of activating a metal structure on an intermediate semiconductor device structure toward metal plating. The method comprises providing an intermediate semiconductor device structure comprising at least one first metal structure and at least one second metal structure on a semiconductor substrate. The at least one first metal structure comprises at least one aluminum structure, at least one copper structure, or at least one structure comprising a mixture of aluminum and copper and the at least one second metal structure comprises at least one tungsten structure. One of the at least one first metal structure and the at least one second metal structure is activated toward metal plating without activating the other of the at least one first metal structure and the at least one second metal structure. An intermediate semiconductor device structure is also disclosed.

    METHODS OF FORMING INTERCONNECTS AND SEMICONDUCTOR STRUCTURES
    5.
    发明申请
    METHODS OF FORMING INTERCONNECTS AND SEMICONDUCTOR STRUCTURES 有权
    形成互连和半导体结构的方法

    公开(公告)号：US20140154879A1

    公开(公告)日：2014-06-05

    申请号：US14176547

    申请日：2014-02-10

    申请人： Micron Technology, Inc.

    发明人： Salman Akram ,  James M. Wark ,  William Mark Hiatt

    IPC分类号： H01L21/768

    CPC分类号： H01L21/76879 ,  C23C18/1607 ,  C23C18/1637 ,  C23C18/1831 ,  C23C18/1834 ,  C23C18/34 ,  C23C18/36 ,  H01L21/288 ,  H01L21/76898 ,  H01L2924/00013 ,  Y10T428/12528 ,  Y10T428/24917 ,  H01L2224/29099

    摘要： A method of activating a metal structure on an intermediate semiconductor device structure toward metal plating. The method comprises providing an intermediate semiconductor device structure comprising at least one first metal structure and at least one second metal structure on a semiconductor substrate. The at least one first metal structure comprises at least one aluminum structure, at least one copper structure, or at least one structure comprising a mixture of aluminum and copper and the at least one second metal structure comprises at least one tungsten structure. One of the at least one first metal structure and the at least one second metal structure is activated toward metal plating without activating the other of the at least one first metal structure and the at least one second metal structure. An intermediate semiconductor device structure is also disclosed.

    摘要翻译： 一种激活中间半导体器件结构上的金属结构朝向金属电镀的方法。 该方法包括提供在半导体衬底上包括至少一个第一金属结构和至少一个第二金属结构的中间半导体器件结构。 所述至少一个第一金属结构包括至少一个铝结构，至少一个铜结构或至少一个包括铝和铜的混合物的结构，并且所述至少一个第二金属结构包括至少一个钨结构。 所述至少一个第一金属结构和所述至少一个第二金属结构中的一个被激活朝向金属镀覆，而不激活所述至少一个第一金属结构和所述至少一个第二金属结构中的另一个。 还公开了一种中间半导体器件结构。