- 专利标题： Bidirectional switch having back to back field effect transistors
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申请号： US15199828申请日： 2016-06-30
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公开(公告)号： US10446545B2公开(公告)日： 2019-10-15
- 发明人: Sik Lui
- 申请人： Alpha and Omega Semiconductor Incorporated
- 申请人地址： US CA Sunnyvale
- 专利权人： ALPHA AND OMEGA SEMICONDUCTOR INCORPORATED
- 当前专利权人： ALPHA AND OMEGA SEMICONDUCTOR INCORPORATED
- 当前专利权人地址： US CA Sunnyvale
- 代理机构： JDI Patent
- 代理商 Joshua D. Isenberg; Robert Pullman
- 主分类号： H01L27/06
- IPC分类号： H01L27/06 ; H01L27/088 ; H01L29/08 ; H01L29/78 ; H01L29/423 ; H01L21/8234 ; H01L29/74 ; H01L27/07
摘要：
A bi-directional semiconductor switching device includes first and second vertical field effect transistors (FETs) formed in tandem from a semiconductor substrate. A source for the first FET is on a first side of the substrate and a source for the second FET is on a second side of the substrate opposite the first side. Gates for both the first and second FETs are disposed in tandem in a common set of trenches formed a drift region of the semiconductor substrate that is sandwiched between the sources for the first and second FETs. The drift layer acts as a common drain for both the first FET and second FET.
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