Invention Grant
- Patent Title: Forming semiconductor device by providing an amorphous silicon core with a hard mask layer
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Application No.: US15476752Application Date: 2017-03-31
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Publication No.: US10453685B2Publication Date: 2019-10-22
- Inventor: Kelly Houben , Steven R. A. Van Aerde , Maarten Stokhof , Bert Jongbloed , Dieter Pierreux , Werner Knaepen
- Applicant: ASM IP Holding B.V.
- Applicant Address: NL Almere
- Assignee: ASM IP Holding B.V.
- Current Assignee: ASM IP Holding B.V.
- Current Assignee Address: NL Almere
- Agency: Knobbe, Martens, Olson & Bear LLP
- Main IPC: H01L21/311
- IPC: H01L21/311 ; H01L21/033
Abstract:
The invention relates to a method of forming a semiconductor device by patterning a substrate by providing an amorphous silicon layer on the substrate and forming a hard mask layer on the amorphous silicon layer. The amorphous silicon layer is provided with an anti-crystallization dopant to keep the layer amorphous at increased temperatures (relative to not providing the anti-crystallization dopant). The hard mask layer may comprise silicon and nitrogen.
Public/Granted literature
- US20180286679A1 FORMING SEMICONDUCTOR DEVICE BY PROVIDING AN AMORPHOUS SILICON CORE WITH A HARD MASK LAYER Public/Granted day:2018-10-04
Information query
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