Invention Grant
- Patent Title: Exposure activated chemically amplified directed self-assembly (DSA) for back end of line (BEOL) pattern cutting and plugging
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Application No.: US15480208Application Date: 2017-04-05
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Publication No.: US10459338B2Publication Date: 2019-10-29
- Inventor: Paul A. Nyhus , Eungnak Han , Swaminathan Sivakumar , Ernisse S. Putna
- Applicant: Intel Corporation
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Schwabe, Williamson & Wyatt, P.C.
- Main IPC: G03F7/039
- IPC: G03F7/039 ; H01L21/033 ; H01L21/3105 ; H01L21/32 ; H01L21/768 ; G03F7/00 ; G03F7/004 ; G03F7/038 ; G03F7/11 ; G03F7/16 ; G03F7/20 ; G03F7/26 ; H01L21/3205 ; H01L21/3213 ; B81C1/00
Abstract:
Self-aligned via and plug patterning for back end of line (BEOL) interconnects are described. In an example, a structure for directed self-assembly includes a substrate and a block co-polymer structure disposed above the substrate. The block co-polymer structure has a polystyrene (PS) component and a polymethyl methacrylate (PMMA) component. One of the PS component or the PMMA component is photosensitive.
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Information query
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