Invention Grant
- Patent Title: Memory circuit and formation method thereof
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Application No.: US15678557Application Date: 2017-08-16
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Publication No.: US10461126B2Publication Date: 2019-10-29
- Inventor: Chun-Yang Tsai , Kuo-Ching Huang , Tong-Chern Ong
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Eschweiler & Potashnik, LLC
- Main IPC: H01L29/788
- IPC: H01L29/788 ; H01L21/336 ; H01L27/24 ; G11C13/00 ; H01L45/00 ; G11C11/16

Abstract:
The present disclosure relates to a memory circuit having a shared control device for access to target and complementary memory devices for improved differential sensing. The memory circuit has a control device arranged within a substrate and having a first terminal coupled to a source-line, a second terminal coupled to a word-line, and a third terminal. A first memory device has a first lower electrode separated from a first upper electrode by a first data storage layer. The first upper electrode is coupled to the third terminal and the first lower electrode is coupled to a first bit-line. A second memory device has a second lower electrode separated from a second upper electrode by a second data storage layer. The second upper electrode is coupled to the second bit-line and the second lower electrode is coupled to the third terminal.
Public/Granted literature
- US20190058007A1 MEMORY CIRCUIT AND FORMATION METHOD THEREOF Public/Granted day:2019-02-21
Information query
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