- 专利标题： Bottom isolation for nanosheet transistors on bulk substrate
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申请号： US16014757申请日： 2018-06-21
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公开(公告)号： US10461154B1公开(公告)日： 2019-10-29
- 发明人: Yi Song , Chi-Chun Liu , Zhenxing Bi , Shogo Mochizuki
- 申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 申请人地址： US NY Armonk
- 专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人地址： US NY Armonk
- 代理机构： Tutunjian & Bitetto, P.C.
- 代理商 Vazken Alexanian
- 主分类号： H01L29/06
- IPC分类号： H01L29/06 ; H01L21/306 ; H01L21/02 ; H01L21/762
摘要：
A method of forming nanosheets that includes providing a stack of semiconductor material layers on a supporting bulk substrate. A first undercut region filled with a first dielectric material is formed extending from the opening into the bulk semiconductor substrate underlying the semiconductor material layers of the at least two stacks of semiconductor material layers. A second undercut region into the bulk semiconductor substrate filled with a second dielectric material from a side of the at least two stacks of semiconductor material layers that is opposite a side of the at least two stacks of semiconductor material layer at which the first undercut region is positioned. The first and second dielectric material merged that provide a full isolation region.
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