Invention Grant
- Patent Title: Semiconductor device structure and method for forming the same
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Application No.: US15911884Application Date: 2018-03-05
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Publication No.: US10461169B2Publication Date: 2019-10-29
- Inventor: Chi-Ruei Yeh , Chih-Lin Wang , Kang-Min Kuo
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Haynes and Boone, LLP
- Main IPC: H01L29/51
- IPC: H01L29/51 ; H01L21/02 ; H01L21/768 ; H01L29/40 ; H01L29/423 ; H01L29/45 ; H01L29/78 ; H01L29/49 ; H01L29/66 ; H01L21/285 ; H01L23/485
Abstract:
A method for forming a semiconductor device structure is provided. The method includes forming a metal gate electrode structure and an insulating layer over the semiconductor substrate. The insulating layer surrounds the metal gate electrode structure. The method includes nitrifying a first top portion of the metal gate electrode structure to form a metal nitride layer over the metal gate electrode structure.
Public/Granted literature
- US20180197969A1 SEMICONDUCTOR DEVICE STRUCTURE AND METHOD FOR FORMING THE SAME Public/Granted day:2018-07-12
Information query
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