Invention Grant
- Patent Title: Bipolar transistor
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Application No.: US14284148Application Date: 2014-05-21
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Publication No.: US10468484B2Publication Date: 2019-11-05
- Inventor: Edward John Coyne , William Allan Lane , Seamus P. Whiston
- Applicant: ANALOG DEVICES GLOBAL
- Applicant Address: BM Hamilton
- Assignee: Analog Devices Global
- Current Assignee: Analog Devices Global
- Current Assignee Address: BM Hamilton
- Agency: Knobbe, Martens, Olson & Bear, LLP
- Main IPC: H01L29/08
- IPC: H01L29/08 ; H01L29/732 ; H01L29/45 ; H01L29/10 ; H01L29/423 ; H01L29/66 ; H01L29/06
Abstract:
A modified bipolar transistor is provided which can provide improved gain, Early voltage, breakdown voltage and linearity over a finite range of collector voltages. It is known that the gain of a transistor can change with collector voltage. This document teaches a way of reducing this variation by providing structures for the depletion regions with the device to preferentially deplete with. As a result the transistor's response can be made more linear.
Public/Granted literature
- US20150340440A1 BIPOLAR TRANSISTOR Public/Granted day:2015-11-26
Information query
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